Improvement of Interfacial Functions in Eco-devices Based on Control of Interfacial Nanostructure
基于界面纳米结构控制的生态器件界面功能改善
基本信息
- 批准号:21560746
- 负责人:
- 金额:$ 2.75万
- 依托单位:
- 依托单位国家:日本
- 项目类别:Grant-in-Aid for Scientific Research (C)
- 财政年份:2009
- 资助国家:日本
- 起止时间:2009 至 2011
- 项目状态:已结题
- 来源:
- 关键词:
项目摘要
The present study aims to clarify the relation between functions and structures of three dissimilar materials interfaces. The interfacial structure of SiC/ Ti/ Al changes the phase adjacent to SiC from Ti to TiAl_3 and finally to Ti_3SiC_2 by annealing. Electrical properties also change corresponding to the change in the phase adjacent to SiC. Ohmic conduction is achieved by forming Ti_3SiC_2 adjacent to SiC. Development of ohmic properties of GaN/ Ti interface is dominated by nitrogen vacancies in GaN sub-interface produced by the interfacial reaction. Devitrification of Zr_<55> Cu_<30> Ni_5Al_<10> in the vicinity of the interface with Al starts at lower temperature than that of Zr_<55> Cu_<30> Ni_5Al_<10> bulk.
本研究旨在阐明三种不同材料界面的功能和结构之间的关系。SiC/ Ti/ Al的界面结构通过退火使与SiC相邻的相由Ti变为TiAl_3,最后变为Ti_3SiC_2。电学性质也随SiC相邻相的变化而变化。通过在SiC附近形成Ti_3SiC_2来实现欧姆传导。GaN/ Ti界面欧姆性质的发展主要是由界面反应产生的氮空位主导的。Zr_<55> Cu_<30> Ni_5Al_<10>在Al界面附近的脱硝开始温度低于Zr_<55> Cu_<30> Ni_5Al_<10>块体。
项目成果
期刊论文数量(0)
专著数量(0)
科研奖励数量(0)
会议论文数量(0)
专利数量(0)
Electrical properties and structure of contact interface between Ti3SiC2 and p-type GaN
- DOI:10.1088/1742-6596/379/1/012021
- 发表时间:2012-08
- 期刊:
- 影响因子:0
- 作者:A. M. Halil;M. Maeda;Yasuo Takahashi
- 通讯作者:A. M. Halil;M. Maeda;Yasuo Takahashi
Effect of interfacial reaction on electrical conduction across the interface between n-type gallium nitride and contact materials
界面反应对n型氮化镓与接触材料界面导电的影响
- DOI:
- 发表时间:2011
- 期刊:
- 影响因子:0
- 作者:M.Maeda;T.Yamasaki;Y.Takahashi
- 通讯作者:Y.Takahashi
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MAEDA Masakatsu其他文献
MAEDA Masakatsu的其他文献
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{{ truncateString('MAEDA Masakatsu', 18)}}的其他基金
Multipass friction stir welding of the same or dissimilar thick aluminum alloy plates
同种或异种铝合金厚板的多道搅拌摩擦焊
- 批准号:
17K06824 - 财政年份:2017
- 资助金额:
$ 2.75万 - 项目类别:
Grant-in-Aid for Scientific Research (C)
Control of interfacial nanostructure between wide-gap semiconductors and their electrodes
宽禁带半导体与其电极之间界面纳米结构的控制
- 批准号:
26420702 - 财政年份:2014
- 资助金额:
$ 2.75万 - 项目类别:
Grant-in-Aid for Scientific Research (C)
Control of Interfacial Strain between Wide-Bandgap Semiconductor and Electrode to Improve Interfacial Electrical Conductance
控制宽带隙半导体与电极之间的界面应变以提高界面电导
- 批准号:
24656444 - 财政年份:2012
- 资助金额:
$ 2.75万 - 项目类别:
Grant-in-Aid for Challenging Exploratory Research