Control of Interfacial Strain between Wide-Bandgap Semiconductor and Electrode to Improve Interfacial Electrical Conductance

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The present study aims to clarify the effect of strain induced in the GaN substrate on the electrical conductance of the contact interface and to demonstrate a technology to improve the conductance by controlling the strain in the GaN substrate. Compressive strain is induced in the GaN substrate in the vicinity of the contact electrode by formation of the Ti-based contact electrode. The interface with a larger compressive strain shows a lower conductance. Deposition of the same film as the electrode on the backside of the GaN substrate compensates the strain and improves the conductance.