新規非鉛巨大圧電体材料の創生

新型无铅巨型压电材料的研制

• 批准号: 09J08939
• 负责人: 安井 伸太郎
• 金额: $ 1.28万
• 依托单位: Tokyo Institute of Technology
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for JSPS Fellows
• 财政年份: 2009
• 资助国家: 日本
• 起止时间: 2009 至 2010
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-09J08939/
• 关键词: 強誘電体薄膜; 圧電体薄膜; 非鉛; MOCVD; MPB; 圧電測定; 放射光

本研究は圧電特性の測定および新規MPBの探索を目的に下記の実験を行った。新規材料開発としてBiFeO_3-Bi(Zn_<1/2>Ti_<1/2>)O_3-Bi(Mg_<1/2>Ti_<1/2>)O_3固溶体のエピタキシャル膜をMOCVD法で作製した。1.正方晶BiFeO_3-Bi(Zn_<1/2>Ti_<1/2>)O_3薄膜の作製と正方晶性の制御(100)SrRuO_3//(100)SrTiO_3電極付き基板上にMOCVD法によって作製に成功した。作製した薄膜の正方晶性は1.22と従来のPbTiO_3やBaTiO_3の正方晶強誘電体と比べて非常に大きい。作製した薄膜の強誘電性を測定したところ、分極反転は確認できなかった。これは巨大正方晶性が原因と考えている。従って次にBi(Mg_<1/2>Ti_<1/2>)O_3を固溶させることで正方晶性を制御した。制御された薄膜の正方晶性はPbTiO_3と同様の正方晶性(1.07)を有し、分極反転を確認した。2.BiFeO_3-Bi(Zn_<1/2>Ti_<1/2>)O_3-Bi(Mg_<1/2>Ti_<1/2>)O_3薄膜におけるMPBの探索上記に記した正方晶構造の薄膜と菱面体晶BiFeO_3-Bi(Mg_<1/2>Ti_<1/2>)O_3の固溶体を作製することで、その組成相境界を発見した。組成相境界では正方晶および菱面体晶の共存領域が存在し、モデル材料のPb(Zr,Ti)O_3と同様の振る舞いを示していることが確認された。3.BiFeO_3-Bi(Zn_<1/2>Ti_<1/2>)O_3-Bi(Mg_<1/2>Ti_<1/2>)O_3薄膜におけるMPBの圧電特性正方晶と菱面体晶の組成相境界において比誘電率および圧電性の向上が確認された。この挙動は従来のPb系材料などに見られる正方晶・非正方晶組成相境界と同様であった。基板面外方向の圧電性は最大300pm/Vを示し、非鉛圧電体材料の中では非常に大きな値であることが確認された。

This study is aimed at the determination of voltage characteristics and the exploration of new MPB. A new material development method for BiFeO_3-Bi(Zn_<1/2>Ti_<1/2>)O_3-Bi(Mg_<1/2>Ti_<1/2>)O_3 solid solution was developed by MOCVD. 1. The preparation of tetragonal BiFeO_3-Bi(Zn_<1/2>Ti_<1/2>)O_3 thin films and the preparation of tetragonal SrRuO_3//(100)SrTiO_3 thin films by MOCVD method were successfully investigated. The tetragonal crystalline properties of the prepared films are 1.22 and 1.23 respectively, and the tetragonal ferroelectric properties of the prepared films are much larger than those of the prepared films. Determination of the strong conductivity of the thin film and the polarization of the film The reason for the huge tetragonal crystal is examined. Bi(Mg_<1/2>Ti_<1/2>)O_3 is a solid solution and its tetragonal crystallinity is controlled. The tetragonal crystallinity of PbTiO_3 and tetragonal crystallinity (1.07) of PbTiO_3 thin films have been confirmed. 2. The study of MPB in BiFeO_3-Bi(Zn_<1/2> Ti_<1/2>) O_3 thin films is reported. The preparation of solid solution of rhombohedral BiFeO_3-Bi(Mg_<1/2>Ti_<1/2>)O_3 thin films with tetragonal structure is discussed. The existence of blue shift region between tetragonal crystal and rhombohedral crystal is confirmed, and the vibration of Pb(Zr,Ti)O_3 in the same phase is shown. 3. BiFeO_3-Bi(Zn_<1/2>Ti_<1/2>)O_3-Bi(Mg_<1/2>Ti_<1/2>)O_3 thin films were successfully prepared. The phase boundaries of tetragonal and non-tetragonal crystal compositions are similar to those of Pb based materials. The maximum voltage in the out-of-plane direction of the substrate is 300pm/V, and the maximum voltage in the non-lead-based material is very high.

项目成果

エピタキシャルBi(Zn_<1/2>Ti_<1/2>)O_3-BiFeO_3系薄膜の正方晶性制御

外延Bi(Zn_<1/2>Ti_<1/2>)O_3-BiFeO_3薄膜的四方结晶度控制

• 发表时间: 2010
• 作者: 安井伸太郎;矢澤慶祐;山田智明;森岡仁;内田寛;舟窪浩
• 通讯作者: 舟窪浩

Effect of film thickness and crystal orientation on the constituent phase in epitaxial BiFeO_3-BiCoO_3 films grown on SrTiO_3 substrates

SrTiO_3衬底上外延BiFeO_3-BiCoO_3薄膜的膜厚和晶体取向对成分相的影响

• 发表时间: 2010
• 期刊: Jpn.J.Appl.Phys.
• 作者: Shintaro Yasui;Keisuke Yazawa;Tomoaki Yamada;Ken Nishida;Hiroshi Uchida;Masaki Azuma;Hiroshi Funakubo
• 通讯作者: Hiroshi Funakubo

Growth of Bi-based tetragonal ferroelectric thin films and their electrical properties

铋基四方铁电薄膜的生长及其电性能

• 发表时间: 2010
• 作者: Hiroshi Funakubo;Shintaro Yasui;Keisuke Yazawa;Masaki Matsushima;Tomoaki Yamada;Hitoshi Morioka;Osami Sakata;Hiroshi Uchida;Takashi Iijima;Junling Wang;You Lu;Takashi Yamamoto;Yuichi Ikuhara
• 通讯作者: Yuichi Ikuhara

Evaluation of Ferroelectricity in epitaxial Bi(M_<1/2>Ti_<1/2>)O_3-BiFeO_3 thin films(II)(M=Zn,Mg)

外延Bi(M_<1/2>Ti_<1/2>)O_3-BiFeO_3薄膜(II)(M=Zn,Mg)铁电性评价

• 发表时间: 2010
• 作者: Shintaro Yasui;Junichi Nagata;Tomoaki Yamada;Hiroshi Uchida;Hisato Yabuta;Takayuki Watanabe;Kaoru Miura;Hiroshi Funakubo
• 通讯作者: Hiroshi Funakubo

Novel lead-free Bi-based Tetragonal Ferroelectric Films Grown by MOCVD

MOCVD 生长的新型无铅铋基四方铁电薄膜

• 发表时间: 2010
• 作者: Hiroshi Funakubo;Shintaro Yasui;Junichi Nagata;Keisuke Yazawa;Tomoaki Yamada;Hiroshi Uchida
• 通讯作者: Hiroshi Uchida