Studies of the generalized Breit interaction effect in autoionizing states

自电离态广义布赖特相互作用效应的研究

• 批准号: 21340111
• 负责人: NAKAMURA Nobuyuki
• 金额: $ 12.06万
• 依托单位: The University of Electro-Communications
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for Scientific Research (B)
• 财政年份: 2009
• 资助国家: 日本
• 起止时间: 2009 至 2012
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-21340111/
• 关键词: 多価イオン; 自動電離状態; ブライト相互作用; 相対論効果; 2電子性再結合; 原子・分子

Dielectronic recombination processes of few electron heavy highly charged ions have been studied with the Tokyo electron beam ion trap at the University of Electro-Communications. By combining two experiments, X-ray measurements and ion abundance measurements, the angular distribution of X-rays emitted in dielectronic recombination processes has been measured for lithiumlike ions. The dominant contribution of the Breit interaction effect on the angular distribution has been clearly demonstrated.

用电子通信大学的东京电子束离子阱研究了少电子重高电荷态离子的双电子复合过程。结合X射线测量和离子丰度测量两个实验，测量了类锂离子双电子复合过程中X射线的角分布。Breit相互作用对角分布的主要贡献已被清楚地证明。

项目成果

Two-photon Observations of Dielectronic Recombination Processes

双电子复合过程的双光子观测

• DOI: 10.1088/0031-8949/2011/t144/014047
• 发表时间: 2011
• 期刊: Phys. Scr
• 作者: Zhi-min Hu; Yue-ming Li; Yamazaki;A.; Nakamura;N
• 通讯作者: N

多価イオンと電子の衝突過程-物理学的興味とデータニーズ-

多电荷离子和电子之间的碰撞过程-物理兴趣和数据需求-

• 发表时间: 2011
• 作者: S.Okuma;Y.Suzuki;Y.Tsugawa;中村信行
• 通讯作者: 中村信行

Dielectronic recombination in He-like, Li-like, and Be-like highly charged ions in the KLL and KLM manifolds

• DOI: 10.1103/physreva.81.022712
• 发表时间: 2010-02
• 期刊: Physical Review A
• 影响因子: 2.9
• 作者: A. Kavanagh;H. Watanabe;Yibin Li;B. O’Rourke;Hirotsugu Tobiyama;N. Nakamura;S. McMahon;C. Yamada;S. Ohtani;F. Currell

Interference between radiative and dielectronic recombinations of highly charged ions observed through the ion abundance in an electron beam ion trap

通过电子束离子阱中的离子丰度观察到的高电荷离子的辐射和双电子重组之间的干扰

• 发表时间: 2009
• 作者: 中村信行;et al.
• 通讯作者: et al.

Activities at the Tokyo EBIT 2010

• DOI: 10.1088/1748-0221/5/08/c08007
• 发表时间: 2010-08
• 期刊: Journal of Instrumentation
• 影响因子: 1.3
• 作者: N. Nakamura;F. Currell;Zhimin Hu;D. Kato;A. Komatsu;Yichen Li;I. Murakami;H. Ohashi;S. Ohtani-S.