Bi-containing III-V semiconductor super lattices for laser diodes with temperature-insensitive laser oscillation wavelength

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Bismuth-containing III-V semiconductors such as GaAsBi and related alloys have unusual properties owing to a reduction of the temperature coefficient of the band gap. These dilute bismuthide III-V alloys are promising for laser diodes with temperature-insensitive wavelengths. The results of transmission electron microscopy, photoluminescence measurements and deep-level transient spectroscopy reveal that metastable GaAsBi grown by molecular beam epitaxy(MBE) has sufficient quality desirable for optoelectronic devices. Laser oscillation for GaAsBi with a temperature-insensitive wavelength is achieved in this study for the first time. GaAsBi/AlGaAs multi-quantum wells have been successfully grown by MBE. Traps at GaAsBi/AlGaAs interface were analyzed, and the trap density was reduced.