Bi-containing III-V semiconductor super lattices for laser diodes with temperature-insensitive laser oscillation wavelength

用于具有温度不敏感激光振荡波长的激光二极管的含Bi III-V半导体超晶格

• 批准号: 21360008
• 负责人: YOSHIMOTO Masahiro
• 金额: $ 9.82万
• 依托单位: Kyoto Institute of Technology
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for Scientific Research (B)
• 财政年份: 2009
• 资助国家: 日本
• 起止时间: 2009 至 2011
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-21360008/
• 关键词: 結晶成長; 半導体物性; 光物性; 超格子; 電子・電気材料

Bismuth-containing III-V semiconductors such as GaAsBi and related alloys have unusual properties owing to a reduction of the temperature coefficient of the band gap. These dilute bismuthide III-V alloys are promising for laser diodes with temperature-insensitive wavelengths. The results of transmission electron microscopy, photoluminescence measurements and deep-level transient spectroscopy reveal that metastable GaAsBi grown by molecular beam epitaxy(MBE) has sufficient quality desirable for optoelectronic devices. Laser oscillation for GaAsBi with a temperature-insensitive wavelength is achieved in this study for the first time. GaAsBi/AlGaAs multi-quantum wells have been successfully grown by MBE. Traps at GaAsBi/AlGaAs interface were analyzed, and the trap density was reduced.

含铋的III-V族半导体如GaAsBi和相关合金由于带隙温度系数的降低而具有不寻常的性质。这些稀铋化物III-V合金有望用于具有温度不敏感波长的激光二极管。透射电子显微镜、光致发光测量和深能级瞬态谱的结果表明，分子束外延（MBE）生长的亚稳态GaAsBi具有足够的光电器件所需的质量。首次实现了GaAsBi的温度不敏感波长的激光振荡。用分子束外延法成功地生长了GaAsBi/AlGaAs多量子威尔斯阱。分析了GaAsBi/AlGaAs界面陷阱，降低了界面陷阱密度。

项目成果

GaAS_<1-x>Bi_xファブリ・ペローレーザの発振波長の低温度依存性

GaAS_<1-x>Bi_x法布里-珀罗激光器振荡波长的低温依赖性

• 发表时间: 2010
• 作者: 富永依里子;尾江邦重;吉本昌広
• 通讯作者: 吉本昌広

GaAs基板上GaAs_<1-x>Bi_x/Al_yGa_<1-y>As多重量子井戸構造の製作

GaAs衬底上GaAs_<1-x>Bi_x/Al_yGa_<1-y>As多量子阱结构的制备

• 发表时间: 2010
• 作者: T.Fuyuki;Y.Tominaga;K.Oe;M.Yoshimoto
• 通讯作者: M.Yoshimoto

Photo-pumped GaAs_<1-x>Bi_x lasing operation with low-temperature-dependent oscillation wavelength

具有低温相关振荡波长的光泵 GaAs_<1-x>Bi_x 激光操作

• DOI: 10.1117/12.907098
• 发表时间: 2012
• 期刊: Proceedings of SPIE, Novel In-Plane Semiconductor Lasers XI
• 作者: Yoriko Tominaga;Kunishige Oe;Masahiro Yoshimoto
• 通讯作者: Masahiro Yoshimoto

Lasing in GaAsBi with low temperature dependence of oscillation wavelength

GaAsBi 中的激光振荡波长对温度的依赖性较低

• 发表时间: 2011
• 作者: Masahiro Yoshimoto;Yoriko Tominaga;Kunishige Oe
• 通讯作者: Kunishige Oe

GaAs_<1-x>Bi_x/GaAsヘテロ接合界面の急峻性の熱処理による変化

热处理引起的GaAs_<1-x>Bi_x/GaAs异质结界面陡度的变化

• 发表时间: 2011
• 作者: 富永依里子;尾江邦重;吉本昌広
• 通讯作者: 吉本昌広