Precise strain evaluation for high-performance bipolar transistor

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The geometry of test sample for local strain evaluation was as small as 5×5μm^2. We established photoluminescence measurement system for such a sample. We fabricated freestanding Si membranes structure (Si-On-Nothing structure), followed by deposition of SiN film. We evaluated strains in these samples using the PL system. As results, a compressive strain of approximately 1% was induced in the 200-nm-thick Si film by 200-nm-thick SiN film ; the strain along <100> direction was much larger than that along <110> direction. Also, we proposed a method for judging uniform or ununiform strain from dependence of PL signal peak position and its intensity on Si film thickness.