Precise strain evaluation for high-performance bipolar transistor

高性能双极晶体管的精确应变评估

• 批准号: 21760011
• 负责人: WANG Dong
• 金额: $ 2.91万
• 依托单位: Kyushu University
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for Young Scientists (B)
• 财政年份: 2009
• 资助国家: 日本
• 起止时间: 2009 至 2010
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-21760011/
• 关键词: 解析・評価; 半導体物性; 電子・電気材料; 先端機能デバイス

The geometry of test sample for local strain evaluation was as small as 5×5μm^2. We established photoluminescence measurement system for such a sample. We fabricated freestanding Si membranes structure (Si-On-Nothing structure), followed by deposition of SiN film. We evaluated strains in these samples using the PL system. As results, a compressive strain of approximately 1% was induced in the 200-nm-thick Si film by 200-nm-thick SiN film ; the strain along <100> direction was much larger than that along <110> direction. Also, we proposed a method for judging uniform or ununiform strain from dependence of PL signal peak position and its intensity on Si film thickness.

用于局部应变评估的测试样品的几何尺寸小至5×5μm^2。我们建立了这种样品的光致发光测量系统。我们制作了独立的Si膜结构（Si-On-Nothing结构），然后沉积SiN膜。我们使用PL系统评估了这些样品中的菌株。其结果是，200 nm厚的SiN膜在200 nm厚的Si膜中产生约1%的压缩应变，沿着方向的应变<100>比沿着方向的应变大得多<110>。提出了一种根据PL信号峰位和强度随Si膜厚变化的关系来判断应变均匀与否的方法。

项目成果

Measurement of Strain in Freestanding Si/SixNy Membrane by Convergent Beam Electron Diffraction and Finite Element Method

用会聚束电子衍射和有限元法测量独立式 Si/SixNy 膜的应变

• 发表时间: 2010
• 期刊: Jpn.J.Appl.Phys. Vol.49
• 作者: H.Gao;K.Ikeda;S.Hata;H.Nakashima;D.Wang;H.Nakashima
• 通讯作者: H.Nakashima

Defect Evaluation by Photoluminescence for Uniaxially Strained Si-On-Insulator

单轴应变绝缘体上硅的光致发光缺陷评估

• 发表时间: 2011
• 期刊: The Electrochemical Society Transactions Vol.34
• 作者: D.Wang;K.Yamamoto;H.Gao;H.Yang;H.Nakashima
• 通讯作者: H.Nakashima

Microphotoluminescence evaluation of local for freestanding Si membranes with SiN deposition

采用 SiN 沉积的局部独立式 Si 膜的显微光致发光评估

• 发表时间: 2010
• 期刊: Proceeding of The Forum on the Science and Technology of Silicon Materials
• 作者: D.Wang;H.Yang;H.Nakashima
• 通讯作者: H.Nakashima

Measurement of strain and strain relaxation in free-standingSi membranes by convergent beam electron diffraction and finite element method

通过会聚束电子衍射和有限元法测量自支撑硅膜的应变和应变弛豫

• 发表时间: 2011
• 期刊: Acta Materialia Vol.59
• 作者: H.Gao;K.Ikeda;S.Hata;H.Nakashima,D.Wang;H.Nakashima
• 通讯作者: H.Nakashima

Measurement of strain and strain relaxation in free-standing Si membranes by convergent beam electron diffraction and finite element method

通过会聚束电子衍射和有限元法测量自支撑硅膜的应变和应变弛豫

• 发表时间: 2011
• 期刊: Acta Materialia
• 影响因子: 9.4
• 作者: H.Gao;K.Ikeda;S.Hata;H.Nakashima;D.Wang;H.Nakashima
• 通讯作者: H.Nakashima