Study on advanced hydrogen sensors based on field effect transistor structure

在本研究中，采用Pd栅极电极的AlGaN/GaN高电子迁移率晶体管的氢传感性能在空气中进行了亚ppm-order到10%的检测。为了阐明氢对Pd/ iii -氮化物结构的探测机理，我们还进行了开尔文探针表征。我们研究了Pd/AlGaN/GaN hemt气体传感器的温度扫描操作对于氢和碳氢化合物的选择性气体检测是非常有用的技术。

In this study, the hydrogen sensing properties of AlGaN/GaN high electron mobility transistors with Pd gate electrodes are demonstrated for sub-ppm-order to 10% detection in air. The Kelvin-probe characterization was also performed in order to clarify the detection mechanism of hydrogen for Pd/III-nitrides structures. We have investigated that the temperature sweep operation of the Pd/AlGaN/GaN HEMT-based gas sensors is very useful technique for the selective gas detection for hydrogen and hydrocarbons.