Development of Organic Memory Devices Using Radical Polymers

点击翻译按钮获取中文摘要

Organic aliphatic polymers bearing a redox-active robust radical pendant per repeating unit have been applied as key materials for organic polymer memo-ries that are viewed as next-generation memory devices. Synthesis of the so-called radical polymers with designed SOMO levels and elucidation of charge injection mechanisms at polymer/metal interfaces allowed fabrication of nonvolatile memories with ON/OFF ratio of more than 10^5, high cycle durability, and excellent bistability. Factors that dominate the electric bistability in response to the applied voltage have been determined, which offered insight into the design principles of entirely organic organic memories. Thin devices made of the radical polymer layers sandwiched by two metal electrodes demonstrated the mem-ory properties at low applied voltages, which were based on the characteristic charge in-jection and transport behaviors found for the radical polymers.