Elucidation of Dynamic Dislocation Behavior in Nano-scale Metal Component

为了研究纳米级铜（Cu）薄膜夹在硅（Si）衬底和氮化硅（SiN）层之间的塑性变形机制，我们开发了一种弯曲试样，通过透射电子显微镜（TEM）可以原位观察其底部结构，并研究了Cu部分的塑性行为。TEM图像显示，Cu部分的初始塑性变形发生在界面边缘（Cu/Si界面与表面之间的连接处）附近，具有较高的临界分辨剪切应力(400。420 MPa)。实验后的透射电镜观察表明，层错层控制了异种界面附近纳米尺度区域的塑性变形。

In order to investigate the plastic deformation mechanism in nano-components where a nano-thickness copper(Cu) film is sandwiched between a silicon(Si) substrate and silicon nitride(SiN) layer, we developed a bending specimen, of which understructure can be observed in-situ by means of a transmission electron microscope(TEM), and examined the plastic behavior of a Cu portion. TEM images exhibited that an initial plastic deformation took place near the interface edge(junction between the Cu/Si interface and the surface) in the Cu portion with a high critical resolved shear stress(400. 420 MPa). The TEM observation after the experiment indicated that stacking fault layers governed the plastic deformation in nano-scale region near the dissimilar interface.