Electric Field Modulation of Giant Thermopower in Oxide Thin FilmTransistors and its Application for IR Sensor

氧化物薄膜晶体管巨热电势的电场调制及其在红外传感器中的应用

• 批准号: 22360271
• 负责人: OHTA Hiromichi
• 金额: $ 10.98万
• 依托单位: Hokkaido University (2012)Nagoya University (2010-2011)
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for Scientific Research (B)
• 财政年份: 2010
• 资助国家: 日本
• 起止时间: 2010 至 2012
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-22360271/
• 关键词: 二次元電子ガス; 熱電能; 電界変調; 赤外線センサー; 二次元電子ｶﾞｽ

Top-gate type thin film transistor structure was fabricated on an oxide semiconductor, SrTiO3 single crystal plate. The electron transport and the thermopower S for the extremely thin two-dimensional electron gas, which can be formed on the SrTiO3 crystal by a gate voltage application, were precisely measured / analyzed. As a result of this study, followings were clarified. 1) Water incorporated nano-porous glass [CAN: H. Ohta et al., Nature Commun. 1: 118 (2010); Adv. Mater. 24, 740 (2012)] is very useful as a gate insulator. 2) Extremely thin 2DEG can be generated on the oxide semiconductor surface when ECBM of the oxide semiconductor is greater than EH2. 3) Extremely thin 2DEG (n3D >4×1021 cm-3) exhibited unusually large S-value, which is five times larger than that of bulk (Figure of merit, ZT~2). This clearly demonstrates that the transistor approach works well as the thermoelectric infrared sensor.

在氧化物半导体--钛酸锶单晶板上制备了顶栅型薄膜晶体管结构。精确测量和分析了利用栅极电压在钛酸锶晶体上形成的超薄二维电子气的电子输运和热电势S。作为这项研究的结果，澄清了以下几点。1)含水纳米多孔玻璃[可以：H.Ohta等人，《自然》杂志。1：118(2010)；Adv.Mater。24,740(2012)]是非常有用的栅绝缘体。2)当氧化物半导体的ECBM大于EH2时，可以在氧化物半导体表面生成极薄的二维电子气。3)超薄2DEG(n3D&GT；4×10~(21)cm~(-3))的S值异常大，是体相的5倍(优值因子ZT~2)。这清楚地表明，晶体管方法与热电红外传感器一样工作良好。

项目成果

Unusually large thermopower enhancement in an electric field induced two-dimensional electron gas

电场感应二维电子气中异常大的热电增强

• 发表时间: 2012
• 作者: Manabu Hagiwara;et al.;H. Ohta;王俊,日比野寿,石澤伸夫;H. Ohta
• 通讯作者: H. Ohta

水電気分解によって誘起した酸化物半導体二次元電子ガスの熱電能変調

水电解诱导氧化物半导体中二维电子气的热电调制

• 发表时间: 2012
• 作者: 水野拓;野村研二;細野秀雄;太田裕道
• 通讯作者: 太田裕道

Water electrolysis induced 2D metal formation in SrTiO3

水电解诱导 SrTiO3 中二维金属的形成

• 发表时间: 2011
• 作者: H. Ohta;Y. Sato;T. Kato;S-W. Kim;K. Nomura;Y. Ikuhara;and H. Hosono
• 通讯作者: and H. Hosono

アモルファス酸化物薄膜トランジスタの熱電能電界変調

非晶氧化物薄膜晶体管的热电场调制

• 发表时间: 2011
• 作者: 小出浩貴;長尾有記;河本邦仁;高崎裕加;梅村知也;加藤丈晴;幾原雄一;太田裕道
• 通讯作者: 太田裕道

Fabrication and Characterization of A Single Crystalline SrTiO_3 Thin Film Transistor

单晶SrTiO_3薄膜晶体管的制备与表征

• 发表时间: 2010
• 作者: K.Uchida;A.Yoshikawa;K.Koumoto;T.Kato;Y.Ikuhara;H.Ohta
• 通讯作者: H.Ohta