Study on the fabrication and high-performance of ultra-micro lithium secondary batteries embedded in silicon chips
Study on the fabrication and high-performance of ultra-micro lithium secondary batteries embedded in silicon chips
批准号:
22550167
负责人:
KURIYAMA Kazuo
金额:
$2.91万
依托单位:
依托单位国家:
日本
项目类别:
Grant-in-Aid for Scientific Research (C)
财政年份:
2010
资助国家:
日本
项目状态:
已结题
起止时间:
2010 至 2012
中文摘要
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英文摘要
All-solid-state Li ion secondary battery, consisting of multiple layers (Poly Si anode / a poly methacrylate acetate (PMMA) electrolyte / LiMn2O4 cathode), is prepared using Si very-large-scale integration technologies. The PMMA solid electrolyte containing LiClO4 for the battery is embedded into an individual trench (300×300 μm2 in area and 2.0 μm in depth) of a double insulating layer (Si3N4/SiO2), which is directly stacked on a poly Si layer, leading to a Li free anode. The individual battery demonstrates a specific capacity of 3.70 nAh/cm2 obtained for the charge of 3 nA anddischarge of 10 pA.
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Origins of low resistivity in Al ion-implanted ZnO bulk single crystals
Al离子注入ZnO块状单晶低电阻率的根源
DOI:
--
发表时间:
2011
期刊:
J.Appl.Phys.
影响因子:
--
作者:
[T.Oga, Y.Izawa, K.Kuriyama, K.Kushida, A.Kinomura]
通讯作者:
A.Kinomura
リチウム二次電池正極材料Li8SiN4の結晶作成と物性評価
锂二次电池正极材料Li8SiN4的晶体制备及物性评价
DOI:
--
发表时间:
2013
期刊:
影响因子:
--
作者:
[山下大輝, 桑野慎一, 栗山一男, 串田一雅]
通讯作者:
串田一雅
DOI:
10.1016/j.nimb.2010.02.017
发表时间:
2010-06
期刊:
Nuclear Instruments & Methods in Physics Research Section B-beam Interactions With Materials and Atoms
影响因子:
1.3
作者:
[Y. Izawa;K. Matsumoto;K. Kuriyama;K. Kushida]
通讯作者:
Y. Izawa;K. Matsumoto;K. Kuriyama;K. Kushida
Raman scattering from the filled tetrahedral semiconductor LiMgAs
填充四面体半导体 LiMgAs 的拉曼散射
DOI:
--
发表时间:
2010
期刊:
29th International Conference on the Physics of Semiconductors, AIP Conference Proceedings
影响因子:
--
作者:
[Zhi-jia Zhang, Jia-Zhao Wang, Shu-Lei Chou, Hua-Kun Liu, Kiyoshi Ozawa, and Hui-jun Li, 長谷川弘侑・西田純一・高田徳幸・山下敬郎, Yusuke Kondo, Aohan Wang(Hiromasa Goto), K.Kuriyama]
通讯作者:
K.Kuriyama
Neutron-transmuted carbon-14 in neutron-irradiated GaN: Compensation of DX-like center
中子辐照 GaN 中的中子嬗变碳 14:类 DX 中心的补偿
DOI:
--
发表时间:
2012
期刊:
影响因子:
--
作者:
[T. Ida, T. Oga. Y. Izawa, K. Kuriyama, K. Kushida,]
通讯作者:
K. Kushida,
共 19 条
Nano-meter scaled evaluation for dynamic behavior of lithium ions in a micro secondary battery embedded in silicon substrate
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批准号:15360014
-
项目类别:Grant-in-Aid for Scientific Research (B)
-
资助金额:$6.72万
-
财政年份:2003
-
负责人:KURIYAMA Kazuo
-
依托单位:
Fabrication and characterization of a lithium conductive multiple layer embedded into a Si substrate
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批准号:12450016
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项目类别:Grant-in-Aid for Scientific Research (B)
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资助金额:$6.53万
-
财政年份:2000
-
负责人:KURIYAMA Kazuo
-
依托单位:
Band-Structure Modification by Insertion of Small Atoms at Tetrahedral Interstitial Sites in Zinc-Blende-Like Lattice
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批准号:01540282
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项目类别:Grant-in-Aid for General Scientific Research (C)
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资助金额:$0.83万
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财政年份:1989
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负责人:KURIYAMA Kazuo
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依托单位:
海外基金