Study on the fabrication and high-performance of ultra-micro lithium secondary batteries embedded in silicon chips

硅片嵌入超微型锂二次电池的制备及高性能研究

• 批准号: 22550167
• 负责人: KURIYAMA Kazuo
• 金额: $ 2.91万
• 依托单位: Hosei University
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for Scientific Research (C)
• 财政年份: 2010
• 资助国家: 日本
• 起止时间: 2010 至 2012
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-22550167/
• 关键词: 超微小電池; リチウム2次電池; シリコンチップ埋め込み; リチウム２次電池; 透過型電子顕微鏡観察; 多結晶シリコン負極; リチウム窒化物; スピン・オン・グラス電解質; 原子間力顕微鏡; 原子間力顕微鏡観察

All-solid-state Li ion secondary battery, consisting of multiple layers (Poly Si anode / a poly methacrylate acetate (PMMA) electrolyte / LiMn2O4 cathode), is prepared using Si very-large-scale integration technologies. The PMMA solid electrolyte containing LiClO4 for the battery is embedded into an individual trench (300×300 μm2 in area and 2.0 μm in depth) of a double insulating layer (Si3N4/SiO2), which is directly stacked on a poly Si layer, leading to a Li free anode. The individual battery demonstrates a specific capacity of 3.70 nAh/cm2 obtained for the charge of 3 nA anddischarge of 10 pA.

采用Si超大规模集成技术制备了由多层（Poly Si阳极/聚甲基丙烯酸酯醋酸酯（PMMA）电解质/LiMn 2 O 4阴极）组成的全固态锂离子二次电池。将用于电池的含LiClO 4的PMMA固体电解质嵌入双绝缘层（Si 3 N4/SiO2）的单个沟槽（面积为300×300 μm2，深度为2.0 μm）中，该沟槽直接堆叠在多晶硅层上，导致无Li阳极。单个电池表现出3.70 nAh/cm 2的比容量获得3 nA的充电和10 pA的放电。

项目成果

Origins of low resistivity in Al ion-implanted ZnO bulk single crystals

Al离子注入ZnO块状单晶低电阻率的根源

• 发表时间: 2011
• 期刊: J.Appl.Phys.
• 作者: T.Oga;Y.Izawa;K.Kuriyama;K.Kushida;A.Kinomura
• 通讯作者: A.Kinomura

リチウム二次電池正極材料Li8SiN4の結晶作成と物性評価

锂二次电池正极材料Li8SiN4的晶体制备及物性评价

• 发表时间: 2013
• 作者: 山下大輝;桑野慎一;栗山一男;串田一雅
• 通讯作者: 串田一雅

Evaluation of zinc interstitial in Si-ion implanted ZnO bulk single crystals by a Rutherford backscattering study: An origin of low resistivity

• DOI: 10.1016/j.nimb.2010.02.017
• 发表时间: 2010-06
• 期刊: Nuclear Instruments & Methods in Physics Research Section B-beam Interactions With Materials and Atoms
• 影响因子: 1.3
• 作者: Y. Izawa;K. Matsumoto;K. Kuriyama;K. Kushida

Raman scattering from the filled tetrahedral semiconductor LiMgAs

填充四面体半导体 LiMgAs 的拉曼散射

• 发表时间: 2010
• 期刊: 29th International Conference on the Physics of Semiconductors, AIP Conference Proceedings
• 作者: Zhi-jia Zhang;Jia-Zhao Wang;Shu-Lei Chou;Hua-Kun Liu;Kiyoshi Ozawa;and Hui-jun Li;長谷川弘侑・西田純一・高田徳幸・山下敬郎;Yusuke Kondo;Aohan Wang(Hiromasa Goto);K.Kuriyama
• 通讯作者: K.Kuriyama

Neutron-transmuted carbon-14 in neutron-irradiated GaN: Compensation of DX-like center

中子辐照 GaN 中的中子嬗变碳 14：类 DX 中心的补偿

• 发表时间: 2012
• 作者: T. Ida;T. Oga. Y. Izawa;K. Kuriyama;K. Kushida,
• 通讯作者: K. Kushida,