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Band-Structure Modification by Insertion of Small Atoms at Tetrahedral Interstitial Sites in Zinc-Blende-Like Lattice

通过在类闪锌矿晶格的四面体间隙位置插入小原子来改变能带结构

基本信息

批准号：
01540282
负责人：
KURIYAMA Kazuo
金额：
$ 0.83万
依托单位：
Hosei University
依托单位国家：
日本
项目类别：
Grant-in-Aid for General Scientific Research (C)
财政年份：
1989
资助国家：
日本
起止时间：
1989 至 1990
项目状态：
已结题

来源：
https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-01540282/
关键词：
Direct band gap Wide gap semiconductor Lithium ternary compound Photoluminescence Impurity level 多結晶薄膜

项目摘要

LiZnP can be viewed as a zinc-blende-like (ZnP)^- lattice filled partially with He-like Li^+ interstitials. We have grown LiZnP by directional solidification of Li, Zn, and P using a tantalum crucible. The grown crystals were transparent red in color and showed the antifluorite structure with a=5.765<plus-minus>0.005A. The differential thermal analysis show an endothermic reaction around 950^ﾟC, indicating the melting point or the decomposition of the crystal. LiZnP was confirmed to be a semiconductor with direct band gap 2.04 to 2.12 eV at a temperature ranging from 295 to 95 K. As grown-crystals are p-type except for some crystals. The typical resistivity, Hall mobility, and carrier concentration at room temperature are of the order of 10^<-1>-10 OMEGAcm, 1-10 cm^2/Vs and 10^<16>-10^<18> cm^<-3>, respectively. The radiative recombination related to a native defect in LiZnP was studied at 77K using photoluminescence (PL) technique. One type of PL emission consists of two peaks : One is a peak 615nm (2.02 eV) associated with a phosphorus vacancy (lying at 110meV below the conduction band) -valence band transition and the other a broad peak at 848nm (1.46eV) associated with phosphorus vacancy-acceptor complex. Another type exhibits an only broad emission around 830 nm. The origin of the broad emissions observed in both types is likely to be identical essentially.

LiZnP可以看作是部分填充了类He Li^+间隙的类闪锌矿(ZnP)^-晶格。我们用钽坩埚定向凝固Li、Zn和P生长了LiZnP。晶体呈透明红色，呈反萤石结构，a=5.765&lt；正负&gt；0.005A。差热分析表明，在95 0ﾟC附近发生吸热反应，表明晶体的熔点或分解。在295~95K温度范围内，LiZnP为直接禁带宽度为2.04~2.12 eV的半导体，除部分晶体外，其余晶体均为p型晶体。其典型的室温电阻率、霍尔迁移率和载流子浓度分别为10^lt；-1-10欧姆、1-10 cm^2/vs和10^lt；-16；-10^lt；18 cm^-3。用光致发光(PL)技术研究了77K下LiZnP中与本征缺陷有关的辐射复合。一种类型的发光由两个峰组成：一个是与磷空位(位于导带下方110 meV)价带跃迁有关的615 nm(2.02 eV)峰，另一个是与磷空位-受主复合体有关的848 nm(1.46 eV)的宽峰。另一种类型的发光仅在830 nm附近有宽发射。在两种类型中观察到的广泛排放的来源很可能在本质上是相同的。