Study on band-controlled semiconductor photocatalysts based on anion-doping in Fe- or Cu-based oxides

点击翻译按钮获取中文摘要

A p-type N-doped α-Fe_2O_3 was developed by magnetron sputtering of a Fe_2O_3 target in a plasma containing N2 and Ar, followed by postannealing. Photoelectrochemical measurement under visible light irradiation showed that N- Fe_2O_3 exhibits a typical cathodic photocurrent originated from the p-type conduction. Furthermore, the photoactivity was enhanced by codoping of Zn. N,Zn-codoped Fe_2O_3, a p-type semiconductor with a band gap of 2.0 eV, was developed by cosputtering of Fe_2O_3 and ZnO in a plasma mixture of N_2 and Ar, followed by post-annealing. N,Zn- Fe_2O_3 showed a very high photocurrent, most likely originating from a higher concentration of acceptors than those of N- and Zn- Fe_2O_3.