Optical absorption spectra of semiconductor films measured bya photothermal technique with eliminating a scattering light

消除散射光的光热技术测量半导体薄膜的光吸收光谱

• 批准号: 22560024
• 负责人: IKARI Tetsuo
• 金额: $ 2.91万
• 依托单位: University of Miyazaki
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for Scientific Research (C)
• 财政年份: 2010
• 资助国家: 日本
• 起止时间: 2010 至 2012
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-22560024/
• 关键词: 光熱変換スペクトル; 半導体薄膜材料; 光散乱; 半導体薄膜; 太陽電池デバイス; 非発光電子遷移

Optical absorption spectra of highly non-uniform samples weresuccessfully observed by using our developed piezoelectric photothermal spectroscopy interms of non-radiative transitions of photo excited carriers. The results showed that thepresent method provided an important knowledge for discussing the electronic structuresof nano-structured semiconductor materials.

利用我们研制的压电光热光谱仪，利用光激发载流子的非辐射跃迁，成功地观测到了高度非均匀样品的光吸收谱。结果表明，该方法为探讨纳米结构半导体材料的电子结构提供了重要的知识。

项目成果

Effect of N composition on temperature dependence of band gap energies of Ga AsN thin films grown by Chemical Beam Epitaxy

N 成分对化学束外延生长的 Ga AsN 薄膜带隙能量温度依赖性的影响

• 发表时间: 2011
• 作者: S.Yamamoto;K.Kashima;A.Suzuki;H.Suzuki;A.Fukuyama;M.Inagaki;M.Yamaguchi;T.Ikari
• 通讯作者: T.Ikari

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Effect of Be doping on the optical properties ofcatalyst free MBE-VLS grown GaAs nanowireson Si (111) substrate

Be掺杂对Si(111)衬底上无催化剂MBE-VLS生长GaAs纳米线光学性能的影响

• 发表时间: 2012
• 作者: M.Yokoyama;W.S.Liang;W.Chen;A.T.S.Wee;T.Matsui;J.Yuhara;岡田亘太郎,赤坂大樹,齋藤秀俊,伊藤治彦;A. Suzuki and T. Ikari
• 通讯作者: A. Suzuki and T. Ikari

Determination of the band gap and its excitonbinding energy of 100nm thick GaInNAs films by using a piezoelectric photo-thermal and aphoto-reflectance spectroscop

使用压电光热和光反射光谱仪测定 100 nm 厚 GaInNAs 薄膜的带隙及其激子结合能

• 发表时间: 2010
• 作者: H.Araki;T.Suzuki;H.Saitoh;小原康寛，大谷 優，長田 明，小寺正敏;A. Fukuyama and T. Ikari
• 通讯作者: A. Fukuyama and T. Ikari

Investigation of the photovoltaic performance ofthe polycrystalline silicon p-n junction by aphotothermal measurement

光热测量研究多晶硅p-n结的光伏性能

• DOI: 10.1016/j.jnoncrysol.2011.11.016
• 发表时间: 2012
• 期刊: Journal of Non-Crystalline Solids 358
• 作者: A. Fukuyama;D. Ishibashi;Y. Sato;K. Sakai,H. Suzuki;K. Nishioka and T. Ikari
• 通讯作者: K. Nishioka and T. Ikari