Study on control of guest-host interactions and thermoelectric properties in clathrate semiconductors
Study on control of guest-host interactions and thermoelectric properties in clathrate semiconductors
批准号:
22560708
负责人:
ANNO Hiroaki
金额:
$2.91万
依托单位国家:
日本
项目类别:
Grant-in-Aid for Scientific Research (C)
财政年份:
2010
资助国家:
日本
项目状态:
已结题
起止时间:
2010 至 2012
中文摘要
用铕在客体位置部分取代钡,制备了新型硅包合物——热电半导体。发现铕客体优先占据晶体结构空隙中的2a位。铕取代对电子结构有显著的影响,由于选择有效质量的增加,导致塞贝克系数的增强。此外,由于在2a位点上客体原子的爱因斯坦温度降低,声子的“咔嗒”散射(共振散射)增强,铕取代引起晶格热导率的显著降低。
英文摘要
New silicon clathrates, thermoelectric semiconductors, were developed by partial substitution of europium for barium on guest sites. The europium guest was found to occupy preferentially the crystallographic position 2a site in the voids in the crystal structure. The europium substitution had a significant influence on the electronic structure, resulting in an enhancement of the Seebeck coefficient due to an increased election effective mass. Further, the europium substitution caused a marked reduction in the lattice thermal conductivity due to an enhanced “rattling” scattering (resonant scattering) of phonons because the Einstein temperature of the guest atoms on the 2a site was reduced.
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Influence of preparation conditions on thermoelectric properties of Ba8Ga16Si30 clathrate by combining arc melting and spark plasma sintering methods
电弧熔炼与放电等离子烧结相结合制备条件对Ba8Ga16Si30包合物热电性能的影响
DOI:
10.1088/1742-6596/379/1/012007
发表时间:
2012
期刊:
Journal of Physics: Conference Series
影响因子:
--
作者:
[Hiroaki Anno, Hiroki Yamada, TakahiroNakabayashi, Masahiro Hokazono and Ritsuko Shirataki]
通讯作者:
Masahiro Hokazono and Ritsuko Shirataki
Ba_8Ga_<16>Si_<30>系クラスレート半導体の合成プロセス条件検討と熱電気的特性の評価
Ba_8Ga_<16>Si_<30>基笼形半导体的合成工艺条件研究及热电性能评价
DOI:
--
发表时间:
2011
期刊:
影响因子:
--
作者:
[山田浩貴, 中林貴大, 外園昌弘, 阿武宏明]
通讯作者:
阿武宏明
Structural and Thermoelectric Properties of Sintered Silicon Clathrates : Ba_<8-x>A_xGa_<16>Si_<30>(A=Sr,Eu;x=0-2) Nominal Compositions
烧结硅包合物的结构和热电性能:Ba_<8-x>A_xGa_<16>Si_<30>(A=Sr,Eu;x=0-2) 标称成分
DOI:
--
发表时间:
2010
期刊:
影响因子:
--
作者:
[Takahiro Nakabayashi, Masahiro Hokazono, Hiroaki Anno, Yaoshuai Ba, Kunihito Koumoto]
通讯作者:
Kunihito Koumoto
Structural and Thermoelectric Properties of Sintered Silicon Clathrates: Ba8〓xEuxGa16Si30 (A=Sr, Eu; x=0〓2) Nominal Compositions
烧结硅包合物的结构和热电性能:Ba8〓xEuxGa16Si30 (A=Sr, Eu; x=0〓2) 标称成分
DOI:
--
发表时间:
2010
期刊:
影响因子:
--
作者:
[T. Nakabayashi, M. Hokazono, H. Anno]
通讯作者:
H. Anno
Crystallographic, Thermoelectric, and Mechanical Properties of Polycrystalline Type-I Ba8Al16Si30-Based Clathrates
Ba8Al16Si30 基多晶 I 型包合物的晶体学、热电和机械性能
DOI:
10.1007/s10853-012-6977-y
发表时间:
2012
期刊:
Journal of Materials Science
影响因子:
4.5
作者:
[Hiroaki Anno, Masahiro Hokazono, Ritsuko Shirataki, Yuko Nagami]
通讯作者:
Yuko Nagami
共 43 条
Developments of environment-friendly semiconductor clathrate for thermoelectric materials and their thermoelectric generator devices
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批准号:25420763
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项目类别:Grant-in-Aid for Scientific Research (C)
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资助金额:$3.33万
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财政年份:2013
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负责人:ANNO Hiroaki
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依托单位:
Study on Creation of Novel Clathrate Semiconductors and Their Application to Thermoelectric Materials
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批准号:19560713
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项目类别:Grant-in-Aid for Scientific Research (C)
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资助金额:$2.91万
-
财政年份:2007
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负责人:ANNO Hiroaki
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依托单位:
海外基金