Spin motive-force device with zinc-blende MnAs nanoparticles

点击翻译按钮获取中文摘要

We aimed at the development of fabrication technology of homogeneous ferromagnetic MnAs nanoparticles embedded in a GaAs matrix for semiconductor spintronic applications. We successfully developed(1) the spinodal decomposition technique using the phase decomposition diagram for fabrication of homogenous MnAs nanoparticles. Using this technique, we successfully fabricated(2) single electron transistors with strong spin accumulation and long spin relaxation time, and(3) double barrier tunnel junctions with zinc-blended MnAs nanoparticles and non-magnetic electrodes with magnetoresistance enhanced by in-elastic co-tunneling.