Fabrication of novel spintronic devices using the ferromagnet/diamond semiconductor heterostructures
Fabrication of novel spintronic devices using the ferromagnet/diamond semiconductor heterostructures
批准号:
22760250
负责人:
UEDA Kenji
金额:
$2.66万
依托单位:
依托单位国家:
日本
项目类别:
Grant-in-Aid for Young Scientists (B)
财政年份:
2010
资助国家:
日本
项目状态:
已结题
起止时间:
2010 至 2011
中文摘要
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英文摘要
In this research, we tried fabricating novel spintronic devices using ferromagnets/diamond semiconductors heterostructures and obtained mainly following three results.(1) It is found that ferromagnetic and half-metallic Heusler Co_2MnSi can be epitaxially grown on diamond for the first time.(2) Schottky barrier heights between ferromagnetic metal and diamond semiconductor can be controlled by selecting ferromagnetic metals with proper work function.(3) Signals related to spin injection were observed by 3-probe Hanle measurements using Ni/diamond ferromagnetic heterojunctions(τ=~20ps).
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Fabrication of Schottky junctions using diamond/ferromagnet heterostructures
使用金刚石/铁磁体异质结构制造肖特基结
DOI:
--
发表时间:
2011
期刊:
影响因子:
--
作者:
[T. Soumiya, K. Ueda, and H. Asano]
通讯作者:
and H. Asano
Fe_2CrSi/Fe_2VSi多層膜の磁気特性と磁気抵抗効果
Fe_2CrSi/Fe_2VSi多层薄膜的磁性能及磁阻效应
DOI:
--
发表时间:
2010
期刊:
影响因子:
--
作者:
[宮脇哲也, 高橋一成, 藤田裕人, 竹田陽一、植田研二,浅野秀文]
通讯作者:
竹田陽一、植田研二,浅野秀文
DOI:
10.3379/msjmag.1206r006
发表时间:
2012-05
期刊:
Journal of The Magnetics Society of Japan
影响因子:
--
作者:
[T. Soumiya;K. Ueda;N. Fukatani;T. Miyawaki;H. Asano]
通讯作者:
T. Soumiya;K. Ueda;N. Fukatani;T. Miyawaki;H. Asano
Spin Filter Effect of La_<0.7>Sr_<0.3>MnO_3/Bi_<1-x>Ba_xFeO_3 Junctions
La_<0.7>Sr_<0.3>MnO_3/Bi_<1-x>Ba_xFeO_3结的自旋滤波器效应
DOI:
--
发表时间:
2010
期刊:
Journal of the Magnetics Society of Japan
影响因子:
--
作者:
[S.Kobayashi, S.Tachiki, K.Yoshimoto, Y.Sugimoto, Y.Takeda, K.Ueda, H.Asano]
通讯作者:
H.Asano
ペロブスカイト酸化物電極上のBa_<0.7>Sr_<0.3>TiO_3薄膜の強誘電特性
钙钛矿氧化物电极上Ba_<0.7>Sr_<0.3>TiO_3薄膜的铁电性能
DOI:
--
发表时间:
2011
期刊:
影响因子:
--
作者:
[小林智, 小林耕平, 田代裕樹, 宮脇哲也, 植田研二, 浅野秀文]
通讯作者:
浅野秀文
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