Photo-assisted synthesis of glucide form carbon dioxide

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Photo-synthesis of glucide using semiconductor surface was conducted. Used semiconductors were GaN and ZnO for n-type material, and NiO and Cu(In,Ga)se2 for p-type material. The p-n junction properties were not good except for ZnO/CIGS system, suggesting an importance of inserting buffer layer. Several kinds of buffer layer material have been examined together with the experiments of photo-synthesis using semiconductor and metal electrode. Using ZnO and Pt electrode, a faint amount of hydroxy-acetaldehyd was detected, however, it is necessary to confirm the reproducibility.