Fabrication of Zero Response Materials

零响应材料的制造

• 批准号: 22656006
• 负责人: TAKENAKA Koshi
• 金额: $ 2.32万
• 依托单位: Nagoya University
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for Challenging Exploratory Research
• 财政年份: 2010
• 资助国家: 日本
• 起止时间: 2010 至 2011
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-22656006/
• 关键词: 無応答材料; 抵抗標準; 抵抗温度係数; 逆ペロフスカイト; ゼロ膨張; 熱膨張制御; 負熱膨張; 薄膜

We achieved an extremely low temperature coefficient of resistance in antiperovskite manganese nitrides Mn3AN 8A : transition metal, etc.) The resistivity of Mn3AgN shows a maximum in the paramagnetic phase. The resistivity-peak temperature is tunable by partial replacement of Ag with other elements, and we found that the temperature coefficient of resistance becomes extremely low at room temperature in Mn3Ag1-xCuxN(β=-0. 57 ppm/K2 andα23=-7. 61 ppm/K for x=0. 28 andβ=-0. 78 ppm/K2 andα23=1. 31 ppm/K for x=0. 30). These values are as low as those of manganin currently used as a standard-resistor material.

我们达到了Antiperovskite硝化锰MN3AN 8A：过渡金属等极低的耐药性系数。电阻峰温度可通过用其他元素进行部分替换来调节，我们发现在MN3AG1-XCUXN中，电阻系数在室温下变得极低（β=-0。57ppm/k2andα23=-7。7。61ppm/k，用于x =0。28和β= 0. 28andβ=-0。ppm/k2 = -78 ppm/k2和k2和k2和k2 = 1.78 ppm/k223 = 1.78 ppm/k2。 x = 0。这些值与目前用作标准抗材料的锰一样低。

项目成果

Sputter deposition and characterization of Mn3CuN thin films

• DOI: 10.1016/j.jallcom.2011.12.110
• 发表时间: 2013-11-15
• 期刊: JOURNAL OF ALLOYS AND COMPOUNDS
• 影响因子: 6.2
• 作者: Aoyama, Masahiro;Takenaka, Koshi;Ikuta, Hiroshi
• 通讯作者: Ikuta, Hiroshi

逆ペロフスカイト型マンガン窒化物の低抵抗温度係数

低电阻温度系数反钙钛矿氮化锰

• 发表时间: 2011
• 作者: 弓波亮介;羅顕佳;秋本克洋;櫻井岳暁;竹中康司・小澤篤・金子晋久・大江武彦・浦野千春
• 通讯作者: 竹中康司・小澤篤・金子晋久・大江武彦・浦野千春