Creation of oxide heterostructures with magnetic particles and their application to semiconductor-based electronic devices

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The aim of this research is to create oxide heterostructures with magnetic particles and their application to semiconductor-based electronic devices. To achieve this, an epitaxial oxide/Si substrate structure is needed for a template. Using high-ultra-vacuum electron beam evaporation with an optimum substrate temperature and O2 gas pressure, Al2O3 was epitaxially grown on a Si(111) substrate. To analyze the phase of Al2O3, stoichiometry, and the heterointerface, X-ray photoelectron spectroscopy was performed for the fabricated epitaxial structure.