Investigation of carrier spin related phenomena in Si and its application to spin-functional devices

Si中载流子自旋相关现象的研究及其在自旋功能器件中的应用

• 批准号: 20686023
• 负责人: NAKANE Ryosho
• 金额: $ 16.72万
• 依托单位: The University of Tokyo
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for Young Scientists (A)
• 财政年份: 2008
• 资助国家: 日本
• 起止时间: 2008 至 2010
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-20686023/
• 关键词: 量子デバイス; スピンデバイス; スピンエレクトロニクス; 先端機能デバイス; 電気・電子材料; 電子デバイス・機器; 磁性; 電子デバイス・電子機器; 電子・電気材料; 複合材料・物性; 集積回路デバイス

The final goal of this study is to realize spin metal-oxide-semiconductor field-effect transistors (spin MOSFETs), which utilize carrier charge as well as carrier spin degrees of freedom. Since the operation principal of a spin MOSFET is spin dependent transport in a MOS inversion Si channel, ferromagnetic materials with a low Schottky barrier height are strongly needed. In this study, two different methods were used : (method 1) ion implantation, (method 2) auto-doping effect during the crystal growth of a ferromagnetic material. In method 1, ferromagnetic FeSi was fabricated through silicidation on a Si(001) substrate. To reduce the silicidation temperature, ion implantation of As atoms with a energy of 15eV were performed. As a result, we demonstrated that FeSi/Si junctions formed with a low temperature have a low Shottky barrier height for electrons. In method 2, MnAs grown on Si(001) was found to have a low Schottky barrier height for electrons, which is due to the auto-doping of As during the initial stage of molecular beam epitaxy. We fabricated spin MOSFETs with MnAs, and found that the spin MOSFETs exhibit hysteretic behavior below 50K, which probably originates from spin-dependent transport.

本研究的最终目标是实现自旋金属氧化物半导体场效应晶体管（自旋MOSFET），它利用载流子电荷以及载流子自旋自由度。由于自旋MOSFET的工作原理是MOS反转Si沟道中的自旋相关输运，因此强烈需要具有低肖特基势垒高度的铁磁材料。本研究采用两种不同的方法：（方法1）离子注入，（方法2）铁磁材料晶体生长过程中的自掺杂效应。在方法1中，通过硅化在Si（001）衬底上制备铁磁FeSi。为了降低硅化温度，进行了能量为15 eV的As原子的离子注入。结果表明，低温下形成的FeSi/Si结具有较低的电子肖特基势垒高度。在方法2中，发现在Si（001）上生长的MnAs具有低的电子肖特基势垒高度，这是由于在分子束外延的初始阶段期间As的自掺杂。我们用MnAs制备了自旋MOSFET，发现自旋MOSFET在50 K以下表现出滞后行为，这可能源于自旋相关输运。

项目成果

Magnetoresistance in MOSFETs with ferromagnetic MnAs source and drain contacts: Spin injection and transport in Si MOS channels

具有铁磁 MnAs 源极和漏极触点的 MOSFET 中的磁阻：Si MOS 通道中的自旋注入和传输

• DOI: 10.1109/drc.2008.4800815
• 发表时间: 2008
• 期刊: 2008 Device Research Conference
• 作者: R. Nakane;T. Harada;K. Sugiura;S. Sugahara;M. Tanaka
• 通讯作者: M. Tanaka

Formation of Si and Ge-based Full-Heusler Alloy Thin Films Using SOI and GOI Substrates for the Half-Metallic Source and Drain of Spin Transistors

使用 SOI 和 GOI 衬底形成硅和锗基全赫斯勒合金薄膜，用于自旋晶体管的半金属源极和漏极

• 发表时间: 2008
• 期刊: ECS Transactions 16
• 作者: Y.Taakamura;A. Nisnijima;Y . Nagahama;R. Nakane;and S. C.sugahara
• 通讯作者: and S. C.sugahara

Magnetoresistance of a Spin Meta 1-Oxide-Semiconductor Field-Effect Transistor (spin MOSFET) with Ferromagnetic MnAs Source and Drain Contacts

具有铁磁 MnAs 源极和漏极触点的自旋元 1 氧化物半导体场效应晶体管（自旋 MOSFET）的磁阻

• 发表时间: 2010
• 期刊: Jpn.J.Appl.Phys. 49
• 作者: R.Nakane;T.Harada;K.Suigura;M.Tanaka
• 通讯作者: M.Tanaka

Characterization of half-metallic L21-phase Co2FeSi full-Heusler alloy thin films formed by rapid thermal annealing

• DOI: 10.1063/1.2838648
• 发表时间: 2007-11
• 期刊: Journal of Applied Physics
• 影响因子: 3.2
• 作者: Y. Takamura;R. Nakane;H. Munekata;S. Sugahara

Siチャネル及びFe電極を有する多端子横型デバイスにおける非局所信号への異方性磁気抵抗効果の影響

各向异性磁阻效应对硅通道和铁电极多端横向器件中非局域信号的影响

• 发表时间: 2011
• 作者: 佐藤彰一;中根了昌;國谷瞬;田中雅明
• 通讯作者: 田中雅明