Fabrication of spin-filter magnetic-hetero structures and their applications to electronic devices

自旋滤波器磁异质结构的制备及其在电子器件中的应用

• 批准号: 23686049
• 负责人: NAKANE Ryosho
• 金额: $ 16.39万
• 依托单位: The University of Tokyo
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for Young Scientists (A)
• 财政年份: 2011
• 资助国家: 日本
• 起止时间: 2011-04-01 至 2014-03-31
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-23686049/
• 关键词: crystal growth; spintronics; 結晶成長; スピンエレクトロニクス; 電子・電気材料; 電子デバイス・機器; 量子閉じ込め

To fabricate spin-filter magnetic-hetero structures, it is essential to fabricate a buffer layer on a Si substrate. In the whole years, I tried to fabricate such a buffer, mainly gamma-Al2O3, on Si substrates. Direct deposition of Al2O3 on Si was performed using a electron-beam evaporator and a pulsed laser deposition system. In addition, thermal reaction of Al and SiO2 was also performed after an Al film deposition on a SiO2/Si substrate.Fabricated buffer layers were evaluated using reflective high energy electron diffraction, atomic force microscope, and X-ray photoelectron spectroscopy. From the analysis, it was concluded that Al2O3 layers without SiO2 interlayers were successfully fabricated on Si substrates , but I could not try to fabricate magnetic multi layers on these buffer layers.

为了制备自旋过滤磁异质结构，在硅衬底上制备缓冲层是必不可少的。多年来，我一直在尝试在硅衬底上制作这样的缓冲器，主要是伽马-Al_2O_3。利用电子束蒸发器和脉冲激光沉积系统在硅上直接沉积了Al_2O_3薄膜。此外，还研究了在SiO_2/Si衬底上沉积Al膜后Al和SiO_2的热反应，并用反射高能电子衍射、原子力显微镜和X射线光电子能谱对制备的缓冲层进行了表征。分析结果表明，在Si衬底上成功地制备了不含SiO_2过渡层的Al_2O_3层，但在这些缓冲层上制备磁性多层膜的尝试是不成功的。

项目成果

Appearance of Anisotropic Magnetoresistance and Electric Potential Distribution in Si-Based Multiterminal Devices With Fe Electrodes

Fe电极硅基多端器件中各向异性磁阻的表现和电势分布

• DOI: 10.1109/lmag.2012.2201698
• 发表时间: 2012
• 期刊: IEEE Magnetics Letters
• 影响因子: 1.2
• 作者: R. Nakane;S. Sato;S. Kokutani;M. Tanaka
• 通讯作者: M. Tanaka

Analysis of 3-terminal Hanle signals in Si-based spintronic devices

硅基自旋电子器件中三端Hanle信号分析

• 发表时间: 2013
• 作者: S. Sato;R. Nakane;M. Tanaka
• 通讯作者: M. Tanaka

強磁性電極を有する半導体ベース多端子デバイスにおける電気伝導:デバイス構造が非局所信号へ与える影響

具有铁磁电极的半导体多端子器件中的导电：器件结构对非局部信号的影响

• 发表时间: 2011
• 作者: 佐藤彰一;中根了昌;國谷瞬;田中雅明
• 通讯作者: 田中雅明

Electrical state in spin devices for nonlocal measurements

用于非局域测量的自旋器件中的电状态

• 发表时间: 2012
• 作者: R. Nakane;S. Sato;S. Kokutani;and M. Tanaka
• 通讯作者: and M. Tanaka

Materials and Devices for Semiconductor Spintronics : Si-based Spintronics

半导体自旋电子学材料和器件：硅基自旋电子学

• 发表时间: 2012
• 作者: Y. Endo;P. Fan;A. Hotta;M. Yamaguchi;Ryosho Nakane and Masaaki Tanaka
• 通讯作者: Ryosho Nakane and Masaaki Tanaka