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Fabrication of spin-filter magnetic-hetero structures and their applications to electronic devices

Fabrication of spin-filter magnetic-hetero structures and their applications to electronic devices
自旋滤波器磁异质结构的制备及其在电子器件中的应用
批准号:
23686049
负责人:
NAKANE Ryosho
金额:
$16.39万
依托单位:
依托单位国家:
日本
项目类别:
Grant-in-Aid for Young Scientists (A)
财政年份:
2011
资助国家:
日本
项目状态:
已结题
起止时间:
2011-04-01 至 2014-03-31

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中文摘要
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英文摘要
To fabricate spin-filter magnetic-hetero structures, it is essential to fabricate a buffer layer on a Si substrate. In the whole years, I tried to fabricate such a buffer, mainly gamma-Al2O3, on Si substrates. Direct deposition of Al2O3 on Si was performed using a electron-beam evaporator and a pulsed laser deposition system. In addition, thermal reaction of Al and SiO2 was also performed after an Al film deposition on a SiO2/Si substrate.Fabricated buffer layers were evaluated using reflective high energy electron diffraction, atomic force microscope, and X-ray photoelectron spectroscopy. From the analysis, it was concluded that Al2O3 layers without SiO2 interlayers were successfully fabricated on Si substrates , but I could not try to fabricate magnetic multi layers on these buffer layers.
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DOI: 10.1109/lmag.2012.2201698
发表时间: 2012
期刊: IEEE Magnetics Letters
影响因子: 1.2
作者: [R. Nakane, S. Sato, S. Kokutani, M. Tanaka]
通讯作者: M. Tanaka
Analysis of 3-terminal Hanle signals in Si-based spintronic devices
硅基自旋电子器件中三端Hanle信号分析
DOI: --
发表时间: 2013
期刊:
影响因子: --
作者: [S. Sato, R. Nakane, M. Tanaka]
通讯作者: M. Tanaka
強磁性電極を有する半導体ベース多端子デバイスにおける電気伝導:デバイス構造が非局所信号へ与える影響
具有铁磁电极的半导体多端子器件中的导电:器件结构对非局部信号的影响
DOI: --
发表时间: 2011
期刊:
影响因子: --
作者: [佐藤彰一, 中根了昌, 國谷瞬, 田中雅明]
通讯作者: 田中雅明
Electrical state in spin devices for nonlocal measurements
用于非局域测量的自旋器件中的电状态
DOI: --
发表时间: 2012
期刊:
影响因子: --
作者: [R. Nakane, S. Sato, S. Kokutani, and M. Tanaka]
通讯作者: and M. Tanaka
6
    Creation of oxide heterostructures with magnetic particles and their application to semiconductor-based electronic devices
    • 批准号:
      22656071
    • 项目类别:
      Grant-in-Aid for Challenging Exploratory Research
    • 资助金额:
      $2.22万
    • 财政年份:
      2010
    • 负责人:
      NAKANE Ryosho
    • 依托单位:
    Investigation of carrier spin related phenomena in Si and its application to spin-functional devices
    • 批准号:
      20686023
    • 项目类别:
      Grant-in-Aid for Young Scientists (A)
    • 资助金额:
      $16.72万
    • 财政年份:
      2008
    • 负责人:
      NAKANE Ryosho
    • 依托单位:
    海外基金