Development of on-demand single photon emitter by precisive charge number controlling on semiconductor nanoparticles
Development of on-demand single photon emitter by precisive charge number controlling on semiconductor nanoparticles
批准号:
22681012
负责人:
YASUTAKE Yuhsuke
金额:
$12.81万
依托单位:
依托单位国家:
日本
项目类别:
Grant-in-Aid for Young Scientists (A)
财政年份:
2010
资助国家:
日本
项目状态:
已结题
起止时间:
2010-04-01 至 2014-03-31
中文摘要
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英文摘要
Aim of this study was verification of on-demand single photon emitting devices by controlling the number of electrons and refractive index of single photon emitter. We have been headed for on-demand single photon emitter with electrical spins by using colloidal semiconductor, crystalline defects in Si, and direct transition of Ge as single photon source with nanogap electrodes structure. We have demonstrated (1) single electron transistor with nanogap electrodes and colloidal nanoparticles, (2) electroluminescence and optical amplification by silicon defect engineering, (3) construction of confocal microscope with high numerical aperture by using solid immersion lens, (4) optical spin injection into direct transition of Ge-based structure.
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シリコン結晶中の高濃度δドーピング層ビスマス不純物のハイブリッドレーザアニール法による活性化
混合激光退火法激活硅晶体高浓度δ掺杂层中的铋杂质
DOI:
--
发表时间:
2010
期刊:
影响因子:
--
作者:
[村田晃一, 安武裕輔, 日塔光一, 坂本邦博, 深津晋, 三木一司]
通讯作者:
三木一司
Quantum oscillation due to Landau subbands in bulk Ge at room temperature
室温下散装 Ge 中朗道子带引起的量子振荡
DOI:
--
发表时间:
2013
期刊:
影响因子:
--
作者:
[遠藤寿, 芳村毅, 松永行子, Y. Yasutake and S. Fukatsu]
通讯作者:
Y. Yasutake and S. Fukatsu
Geへの光スピン注入の温度依存性
光学自旋注入 Ge 的温度依赖性
DOI:
--
发表时间:
2012
期刊:
影响因子:
--
作者:
[Araki, J., Kagaya, K., Tsukamoto, N., Ohkawa, K., 白石誠司, 安武裕輔,深津晋]
通讯作者:
安武裕輔,深津晋
発光欠陥を有するInSb QDs埋め込みSi構造における光利得のポストアニール依存性
具有发光缺陷的 InSb QD 嵌入 Si 结构中光学增益的退火后依赖性
DOI:
--
发表时间:
2011
期刊:
影响因子:
--
作者:
[安武裕輔, 深津晋]
通讯作者:
深津晋
Observation of Oscillatory Magneto-photoluminescence of Direct Transition in Ge at Room Temperature
室温下Ge直接跃迁的振荡磁光致发光观察
DOI:
--
发表时间:
2012
期刊:
影响因子:
--
作者:
[Y.Yasutake, S.Hayashi, and S.Fukatsu,]
通讯作者:
and S.Fukatsu,
共 51 条
Development of germanium based Landau quantum oscillation devices at room temperature
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批准号:25600014
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项目类别:Grant-in-Aid for Challenging Exploratory Research
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资助金额:$2.58万
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财政年份:2013
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负责人:YASUTAKE Yuhsuke
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依托单位:
海外基金