Near-infrared nano-spectroscopy and emission energy control of semiconductor quantum dots using a phase-change mask method

使用相变掩模方法的半导体量子点的近红外纳米光谱和发射能量控制

• 批准号: 23360141
• 负责人: SAIKI Toshiharu
• 金额: $ 12.23万
• 依托单位: Keio University
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for Scientific Research (B)
• 财政年份: 2011
• 资助国家: 日本
• 起止时间: 2011-04-01 至 2014-03-31
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-23360141/
• 关键词: 量子ドット; 相変化材料; 近接場光学; 応力光学; 近赤外分光; ナノ分光

We have proposed a method to achieve near-field imaging spectroscopy of single semiconductor quantum dots with high sensitivity by using an optical mask layer of a phase-change material. An amorphous aperture allows imaging spectroscopy with high spatial resolution and high collection efficiency. We present numerical simulation and experimental result that show the effectiveness of this technique.Inspired by this optical mask effect, a new approach which can precisely control the emission energy of semiconductor quantum dots has been proposed. This method uses the volume expansion of a phase-change material upon amorphization, which allows reversible emission energy tuning of quantum dots. We calculated the stress and energy shift distribution using finite element method. Simulation result is accompanied by two experimental studies; two-dimensional PL intensity mapping and an analysis on the relationship between PL intensity ratio and energy shift were performed.

我们提出了一种利用相变材料的光学掩模层实现高灵敏度单半导体量子点近场成像光谱的方法。无定形孔径允许成像光谱具有高空间分辨率和高收集效率。数值模拟和实验结果表明了该方法的有效性。受这种光掩模效应的启发，提出了一种精确控制半导体量子点发射能量的新方法。该方法利用相变材料在非晶化时的体积膨胀，实现了量子点发射能量的可逆调谐。采用有限元法计算了应力和能量的位移分布。仿真结果与两项实验研究相结合；进行了二维PL强度映射，并分析了PL强度比与能量位移的关系。

项目成果

Local control of emission energy of semiconductor quantum dots using volume expansion of a phase-change material

利用相变材料的体积膨胀局部控制半导体量子点的发射能量

• DOI: 10.1063/1.4795291
• 发表时间: 2013
• 期刊: Appl. Phys. Lett
• 作者: M. Takahashi;Nurrul Syafawati Humam;N. Tsumori;T. Saiki;P. Regreny;and M. Gendry
• 通讯作者: and M. Gendry

Nanophotonic Switching with Chalcogenide Phase Change Materials and its Application to Brain-Inspired Optical Memory

硫族相变材料的纳米光子开关及其在类脑光学存储器中的应用

• 发表时间: 2013
• 作者: Saiki;T.
• 通讯作者: T.

Near-infrared nano-spectroscopy and emission energy control of semiconductor quantum dots using a phase-change material

使用相变材料的半导体量子点的近红外纳米光谱和发射能量控制

• DOI: 10.1088/1742-6596/471/1/012007
• 发表时间: 2013
• 期刊: J. Phys. : Conf. Series
• 作者: N. Tsumori;M. Takahashi;Nurrul Syafawati Humam;P. Regreny;M. Gendry;and T. Saiki
• 通讯作者: and T. Saiki

アモルファス/結晶周期構造形成の解明に向けたGeTeにおける結晶化過程の観察

观察 GeTe 的结晶过程以阐明非晶/晶体周期结构的形成

• 作者: 森本悠介;勝又洋介;森田貴紀;新谷俊通;斎木敏治
• 通讯作者: 斎木敏治

Experimental study of near-field light collection efficiency of aperture fiber probe at near-infrared wavelengths.

近红外波长孔径光纤探头近场光采集效率的实验研究。

• DOI: 10.1364/ao.50.005710
• 发表时间: 2011
• 期刊: Applied optics
• 影响因子: 1.9
• 作者: Nobuhiro Tsumori;Motoki Takahashi;Y. Sakuma;T. Saiki
• 通讯作者: T. Saiki