Fundamental study on uniform mixed semiconductor crystal by external force application and control of solid-liquid intercial instability

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Solid-liquid interfacial instability during growth of mixed crystal suchi as IngaSb and Si/Ge was experimentally and numerically investigated. Effect of gravity and intefacial kinetics on the interfacial instability during growth by the temperature gradient methid was clarified, and numerical simulation code, which can take into acount of such effects, was developed. In the crystal growth of Si/Ge by the floating zone method, Marangoni convection in the melt was clarified, and effect of crystal rotation and horizontal/vertical magnetic field application effect on the suppression of Marangoni convection was clarified by using numerical simulation.