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Study of applied electrical field effect on semiconductor crystall growth mechanism from melt and crystal growth for x-ray detectors

外加电场对半导体晶体生长机制的影响研究熔体和X射线探测器晶体生长

基本信息

批准号：
15560652
负责人：
OKANO Yasunori
金额：
$ 1.98万
依托单位：
Shizuoka University
依托单位国家：
日本
项目类别：
Grant-in-Aid for Scientific Research (C)
财政年份：
2003
资助国家：
日本
起止时间：
2003 至 2004
项目状态：
已结题

来源：
https://kaken.nii.ac.jp/en/grant/KAKENHI-PROJECT-15560652/
关键词：
Crystal Growth Electrical Field Convection Heat Transfer Mass Transfer Semiconductor

项目摘要

Crystal growth by Liquid Phase Electroepitaxy was studied numerically and experimentally. Continuity, Navier-Stokes, Energy equations and Mass transfer equation considering electro-migration were descritized by control volume method and solved by SIMPLE technique. Numerical results show that substrate temperature is decreased by Peltie effect caused by electric application and natural convection is caused by the temperature distribution even if the system temperature was kept constant. In order to suppress the natural convection, magnetic field application is beneficial. However, holes are observed under strong magnetic fields. Therefore, effect of rotation, which has similar effect on suppression of convection to the magnetic field, on the liquid convection was investigated. Convection in the liquid was suppressed by Coliori force caused by rotation and concentration gradient near the growth interface must be steep because high density materials will be removed by centrifugal force. As the results, it can be expected that crystal growth rate becomes higher by applying rotation.In the experiments, it was shown that Si, GaAs substrates reacted with liquid and it was concluded that CdTe substrate is required. CdTe crystal with 23 μm thickness was successfully grown on the CdTe substrate. Effect of growth temperature on the crystal quality was also investigated.

对液相电外延晶体生长进行了数值和实验研究。采用控制体积法描述了考虑电迁移的连续性、纳维-斯托克斯、能量方程和传质方程，并采用SIMPLE技术求解。数值结果表明，即使系统温度保持恒定，通电引起的珀尔蒂效应也会导致基板温度下降，并且温度分布会引起自然对流。为了抑制自然对流，施加磁场是有利的。然而，在强磁场下会观察到空穴。因此，研究了旋转对液体对流的影响，该旋转对磁场对流的抑制具有类似的效果。液体中的对流受到旋转引起的科利奥里力的抑制，并且生长界面附近的浓度梯度必须很陡，因为高密度材料将被离心力去除。结果，可以预期，通过施加旋转，晶体生长速率会变得更高。在实验中，表明Si、GaAs衬底与液体发生反应，并得出结论需要CdTe衬底。在CdTe衬底上成功生长了23μm厚的CdTe晶体。还研究了生长温度对晶体质量的影响。