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Porous Two-Dimensional Inorganic Semiconductors for Optoelectronic Devices

Porous Two-Dimensional Inorganic Semiconductors for Optoelectronic Devices
用于光电器件的多孔二维无机半导体
批准号:
DP240100961
负责人:
Prof Yusuke Yamauchi
金额:
$31.16万
依托单位国家:
澳大利亚
项目类别:
Discovery Projects
财政年份:
2024
资助国家:
澳大利亚
项目状态:
未结题
起止时间:
2024-01-01 至 2026-12-31

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中文摘要
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英文摘要
This project aims to develop new highly porous two-dimensional (2D) inorganic semiconductors for advanced photodetectors. The key concept is to combine electrochemical deposition and post-growth plasma treatment to tune the optoelectronic properties of these materials. This project expects to generate new insights into the correlations between different pore parameters and plasma treatment conditions for 2D inorganic semiconductors and new advanced materials with high sensitivity and broad spectral range for photodetectors. The project is expected to provide significant benefits by advancing Australia’s capability in the manufacturing of inorganic semiconductors and photodetectors for application in optical communications and sensors.
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Materials Nanotectonics: Designing Conductive Inorganic Porous Materials
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国内基金
海外基金
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