Porous Two-Dimensional Inorganic Semiconductors for Optoelectronic Devices

该项目旨在开发用于先进光电探测器的新型高孔二维(2D)无机半导体。其关键概念是结合电化学沉积和生长后等离子体处理来调整这些材料的光电性能。这一项目有望对二维无机半导体的不同孔参数与等离子体处理条件之间的关系以及用于光电探测器的高灵敏度和宽光谱范围的新的先进材料产生新的见解。该项目预计将通过提高澳大利亚在制造用于光通信和传感器的无机半导体和光电探测器方面的能力而带来重大好处。

This project aims to develop new highly porous two-dimensional (2D) inorganic semiconductors for advanced photodetectors. The key concept is to combine electrochemical deposition and post-growth plasma treatment to tune the optoelectronic properties of these materials. This project expects to generate new insights into the correlations between different pore parameters and plasma treatment conditions for 2D inorganic semiconductors and new advanced materials with high sensitivity and broad spectral range for photodetectors. The project is expected to provide significant benefits by advancing Australia’s capability in the manufacturing of inorganic semiconductors and photodetectors for application in optical communications and sensors.