Application of surface modified colloidal nano-dots for organic memory transistors

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We found that the large threshold voltage shift in the transfer characteristics were obtained when semiconductor colloidal nano-dots were used as floating gates of pentacene memory transistors. With those memory transistors, it was confirmed that the minimum writing voltage of the memory effect was larger for smaller nano-dots. This result supports the model that the memory effect is caused by electrons which tunneled from the pentacene molecules into the nano-dots. Furthermore, based on the above-mentioned model, we improved the writing characteristics of the memory transistors by removing the organic ligand molecules of the nano-dots. As the result, the writing time has become ~1/3 of that for the memory transistors without removing the ligand molecules.