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Thin filmtransistors using 2-dimensional crystals of colloidal dots

Thin filmtransistors using 2-dimensional crystals of colloidal dots
使用胶体点二维晶体的薄膜晶体管
批准号:
20510105
负责人:
TANAKA Ichiro
金额:
$2.83万
依托单位:
依托单位国家:
日本
项目类别:
Grant-in-Aid for Scientific Research (C)
财政年份:
2008
资助国家:
日本
项目状态:
已结题
起止时间:
2008 至 2010

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项目成果

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相关文献

中文摘要
翻译
我们制备了高密度的半导体胶体纳米点薄膜,表面覆盖率约为100%。利用有机薄膜晶体管将胶体纳米点的NOMO层嵌入在栅绝缘层和有源层之间,对纳米点的密度进行了电学测量。所制备的晶体管具有较强的存储效应,在有机存储器件中具有广阔的应用前景。器件结构进一步改进,表现出相当于世界顶尖水平的大存储效应,以及高的载流子迁移率。
英文摘要
We fabricated high density nomolayer films of semiconductor colloidal nano-dots with approximately 100% surface coverage. The density of the nono-dots was electrically measured using organic thin film transistors in which the nomo layer of colloidal nano-dots was embedded between the gate insulator and the active layer. The fabricated transistors showed large memory effect ; thus, they are promising for organic memory devices. The device structure was further improved, and they showed large memory effect, which is comparable to the top level in the world, as well as high carrier mobility.
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会议论文
Pentacene Memory Transistors Using Monolayer of Semiconductor Colloidal Nano-Dots
使用单层半导体胶体纳米点的并五苯存储晶体管
DOI: --
发表时间: 2010
期刊:
影响因子: --
作者: [Kaori Kajimoto, T.Minami, K.Uno, Ichiro Tanaka]
通讯作者: Ichiro Tanaka
DOI: --
发表时间:
期刊:
影响因子: --
作者: []
通讯作者:
Large Memory Effect and High Carrier Mobility of Organic Field-Effect Transistors Using Semiconductor Colloidal Nano-Dots Dispersed in Polymer Buffer Layser
使用分散在聚合物缓冲层中的半导体胶体纳米点的有机场效应晶体管的大记忆效应和高载流子迁移率
DOI: --
发表时间: 2011
期刊: Jpn.J.Appl.Phys. Vol.50
影响因子: --
作者: [K.Kajimoto, A.Kurokawa, K.Uno, I.Tanaka]
通讯作者: I.Tanaka
DOI: --
发表时间: 2011
期刊:
影响因子: --
作者: [梶本かおり, 黒川篤, 宇野和行, 田中一郎]
通讯作者: 田中一郎
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