Study on coherent phonon generation by microcavity structures

微腔结构相干声子产生研究

• 批准号: 23540377
• 负责人: SHIMADA Ryoko
• 金额: $ 3.24万
• 依托单位: Japan Women's University
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for Scientific Research (C)
• 财政年份: 2011
• 资助国家: 日本
• 起止时间: 2011 至 2013
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-23540377/
• 关键词: マイクロキャビティ; コヒーレントフォノン; キャビティポラリトン

This study established the method(s) of preparing ZnO/GaN-based hybrid microcavities. Specifically, crack-free ZnO/GaN hybrid microcavities were found to be well prepared with the MOCVD, MBE and UHCVD methods, and the GaN microcavities, with the MOCVD method using epitaxial lateral overgrowth technique. Fundamental optical properties for these microcavities, such as strong coupling regime, were characterized by the angle-resolved reflectivity and photoluminescence measurements. Unfortunately, no coherent phonon was generated from those microcavities, and its relationship with the cavity polariton remained unclear. Further study is planned for this relationship.

本研究建立了ZnO/GaN基混合微腔的制备方法。 具体来说，发现采用MOCVD、MBE和UHCVD方法可以很好地制备无裂纹的ZnO/GaN混合微腔，而采用采用外延横向过生长技术的MOCVD方法可以很好地制备GaN微腔。这些微腔的基本光学特性，如强耦合制度，其特征在于角分辨反射率和光致发光测量。不幸的是，没有相干声子从这些微腔中产生，它与腔极化激元的关系仍然不清楚。 计划对这种关系进行进一步研究。

项目成果

Surface plasmon-enhanced photoluminescence of organic molecules with metal nanoparticles

金属纳米颗粒有机分子的表面等离子体增强光致发光

• 发表时间: 2013
• 作者: M. Kimura;N. Tarutani;M. Takahashi;R. Shimada
• 通讯作者: R. Shimada

GaN-Based Vertical Cavities with All Dielectric Reflectors by Epitaxial Lateral Overgrowth

• DOI: 10.7567/jjap.52.08jh03
• 发表时间: 2013-05
• 期刊: Japanese Journal of Applied Physics
• 影响因子: 1.5
• 作者: S. Okur;R. Shimada;Fan Zhang;S. Hafiz;Jaesoong Lee;V. Avrutin;H. Morkoç;A. Franke;F. Bertram;J. Christen;Ü. Özgür

The 13 th Japanese-American Frontiers of Science (JAFoS) Symposium

第13届日美科学前沿（JAFoS）研讨会

• 发表时间: 2012
• 作者: 浅原 彰文;所 裕子;大越 慎一;末元 徹;永田拓也;R. Shimada
• 通讯作者: R. Shimada

Energy transfer in ZnO-antharacene hybrid structure

ZnO-蒽杂化结构中的能量转移

• 发表时间: 2012
• 期刊: Optical Materials Express
• 影响因子: 2.8
• 作者: R. Shimada;B. Urban;M. Sharma;A. Singh;V.Avrutin;H. Morkoc and A. Neogi
• 通讯作者: H. Morkoc and A. Neogi

ZnO Materials for Electronic and Optoelectronic Device Applications, Chapter 9, Growth and Chracterization of GaN/ZnO Heteoepitaxy and ZnO-Based Hybrid Devices

用于电子和光电器件应用的 ZnO 材料，第 9 章，GaN/ZnO 异质外延和 ZnO 基混合器件的生长和表征

• 发表时间: 2012
• 作者: R. Shimada and H. Morkoc;John Wiley & Sons
• 通讯作者: John Wiley & Sons