VUV Light Emitting Device based on Fluorides Thin Films

采用脉冲激光沉积法在MgF2(001)衬底上成功地生长了Nd3：LuF3、Nd3：LuF3和KMgF3薄膜。薄膜的光致发光和阴极发光光谱显示出明显的主峰，这与晶体的结果相似。利用复合氟化物薄膜作为荧光粉和碳纳米纤维场电子发射体，制备了紫外光发射器件。利用室温下溅射草状碳表面生长的纳米碳纤维场电子发射体，实现了无加热器件。用KMgF3和Nd3：LuF3薄膜制作的器件在真空紫外区显示了光谱。在800V的引出电压和1800V的加速电压下，采用KMgF3薄膜的器件输出功率达到2uW，其工作波长为140-220 nm，这是报道的固体荧光粉器件中最短的波长。

Nd3+:LuF3, Nd3+:LuF3 and KMgF3 thin films were successfully grown on MgF2(001) substrates by pulsed laser deposition method. Photoluminescence and Cathodeluminescence spectra of thin films revealed dominant peaks, which are similar to the results obtained from crystals. Ultraviolet light emitting devices were demonstrated by employing complex fluoride thin film as phosphor and carbon nanofibers field electron emitter. The heating-free device was realized by utilizing carbon nanofibers field electron emitter, which was grown by sputtering grassy carbon surface at room temperature. The devices using KMgF3 and Nd3+:LuF3 thin films shows the spectra in vacuum ultraviolet region. The output power of the devices using KMgF3 thin film reached to 2 uW at an extraction voltage of 800 V and acceleration voltage of 1800 V, and it operated at wavelengths 140-220 nm, which is the shortest wavelength reported for solid-state phosphor devices.