Study on heteroepitaxial growth of compound semiconductor and nanostructures

化合物半导体及纳米结构异质外延生长研究

• 批准号: 23560369
• 负责人: GUO Qixin
• 金额: $ 3.41万
• 依托单位: Saga University
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for Scientific Research (C)
• 财政年份: 2011
• 资助国家: 日本
• 起止时间: 2011 至 2013
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-23560369/
• 关键词: 化合物; 半導体; ヘテロ成長; 光学特性; 電気特性; バンドオフセット

ZnTe is a promising material for high efficiency pure green LED. In this study, we investigated p-type ZnTe heteroepitaxial growth on n-type ZnO. X-ray diffraction, Raman spectroscopy and photoluminescence analysis revealed that p-type ZnTe(111) epitaxial films are obtained. Diode rectification was clearly observed from the current-voltage (I-V) characteristics of the ZnTe/ZnO hetero structure. These results and achievements were published on international journals such as Applied Physics Letters.

ZnTe是一种很有前途的高效率纯绿色LED材料。在这项研究中，我们研究了p型ZnTe异质外延生长的n型ZnO。X射线衍射、拉曼光谱和光致发光光谱分析表明，制备出了p型ZnTe（111）外延薄膜。从ZnTe/ZnO异质结构的电流-电压（I-V）特性清楚地观察到二极管整流。这些成果和成就发表在《应用物理快报》等国际期刊上。

项目成果

Epitaxial Growth of ZnTe Layers on ZnO Bulk Substrates by Metalorganic Vapor Phase Epitaxy

金属有机气相外延在 ZnO 块体衬底上外延生长 ZnTe 层

• DOI: 10.7567/jjap.52.040206
• 发表时间: 2013
• 期刊: Japanese Journal of Applied Physics
• 影响因子: 1.5
• 作者: Yoichi Hoshi;Shin-ichi Kobayashi;Takayuki Uchida,Hidehiko Shimizu;Hajime Akiyama
• 通讯作者: Hajime Akiyama

Band alignment of ZnTe/GaAs heterointerface investigated by synchrotron radiation photoemission spectroscopy

• DOI: 10.1063/1.4794950
• 发表时间: 2013-03
• 期刊: Applied Physics Letters
• 影响因子: 4
• 作者: Q. Guo;Kazutoshi Takahashi;Katsuhiko Saito;H. Akiyama;Tooru Tanaka;M. Nishio

Characterization of ZnTe layers on (0001) ZnO substrates by metalorganic vapor phase epitaxy

通过金属有机气相外延表征 (0001) ZnO 衬底上的 ZnTe 层

• 发表时间: 2013
• 作者: Hajime Akiyama;Tooru Idekoba;Katsuhiko Saito;Tooru Tanaka;Mitsuhiro Nishio;and Qixin Guo
• 通讯作者: and Qixin Guo

Characterization of ZnTe Epilayers on GaAs (111) Substrates by Metalorganic Vapor Phase Epitaxy

金属有机气相外延表征 GaAs (111) 衬底上的 ZnTe 外延层

• 发表时间: 2012
• 作者: Qixin Guo;Hajime Akiyama;Hiroyuki Hirano;Katsuhiko Saito;Tooru Tanaka;and Mitsuhiro Nishio
• 通讯作者: and Mitsuhiro Nishio

Qixin Guo, Kazutoshi Takahashi, Katsuhiko Saito, Hajime Akiyama, Tooru Tanaka, and Mitsuhiro Nishio

郭启鑫、高桥一俊、齐藤胜彦、秋山肇、田中彻、西尾光宏

• 发表时间: 2013
• 期刊: Applied Physics Letters
• 影响因子: 4
• 作者: Kazunari Shinbo;Yasuo Ohdaira;Akira Baba;Keizo Kato;Futao Kaneko;Band alignment of ZnTe/GaAs heterointerface investigated by synchrotron radiation photoemission spectroscopy
• 通讯作者: Band alignment of ZnTe/GaAs heterointerface investigated by synchrotron radiation photoemission spectroscopy