Stabilization of SRAM according to fluctuation of transistor characteristics

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Against the problem that the SRAM fails to function because of the fluctuation of the threshold voltage of transistors, a method of securing SRAM is established. This method consists of two steps, firstly detecting the processed threshold voltage, and next, giving the optimum supply voltage to the SRAM according to the detected threshold voltage. This method enables to secure SRAMs which do not operate under the standard condition. To realize the method, a new detecting technique of the processed threshold voltage is proposed and the table showing the relation between the threshold voltage and the optimum supply voltage is developed. Finally, the whole SRAM circuit is designed and simulated. The simulation result shows that the proposed method is effective to improve the operation yield of SRAM.