Stabilization of SRAM according to fluctuation of transistor characteristics

根据晶体管特性的波动实现 SRAM 的稳定化

• 批准号: 23560423
• 负责人: MAKINO Hiroshi
• 金额: $ 3.33万
• 依托单位: Osaka Institute of Technology
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for Scientific Research (C)
• 财政年份: 2011
• 资助国家: 日本
• 起止时间: 2011 至 2013
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-23560423/
• 关键词: 電子デバイス; 集積回路; SRAM; しきい値電圧; ばらつき; 動作安定化; スピードセンサ; 電圧発生器; しきい値; 電圧; リングオシレータ; 書き込み; 読み出し

Against the problem that the SRAM fails to function because of the fluctuation of the threshold voltage of transistors, a method of securing SRAM is established. This method consists of two steps, firstly detecting the processed threshold voltage, and next, giving the optimum supply voltage to the SRAM according to the detected threshold voltage. This method enables to secure SRAMs which do not operate under the standard condition. To realize the method, a new detecting technique of the processed threshold voltage is proposed and the table showing the relation between the threshold voltage and the optimum supply voltage is developed. Finally, the whole SRAM circuit is designed and simulated. The simulation result shows that the proposed method is effective to improve the operation yield of SRAM.

针对晶体管阈值电压波动导致SRAM失效的问题，提出了一种保护SRAM的方法。该方法包括两个步骤，首先检测处理后的阈值电压，然后根据检测到的阈值电压给出SRAM的最佳电源电压。这种方法能够保护在标准条件下不工作的SRAM。为了实现该方法，提出了一种新的阈值电压检测技术，并建立了阈值电压与最佳电源电压的关系表。最后，对整个SRAM电路进行了设计和仿真。仿真结果表明，该方法能有效提高SRAM的运算良率。

项目成果

Increasing Static Noise Margin of Single-bit-line SRAM by Lowering Bit-line Voltage during Reading

通过降低读取期间的位线电压来增加单位线 SRAM 的静态噪声容限

• 发表时间: 2011
• 作者: S. Nakata;H. Suzuki;H. Makino;S. Mutoh;M. Miyama;and Y. Matsuda
• 通讯作者: and Y. Matsuda

Expansion of SRAM Operation Margin by Adaptive Voltage Supply

通过自适应电压供应扩大 SRAM 操作裕度

• 发表时间: 2013
• 作者: Kyohei Kishida;Tomohiro Tsujii;Hroshi Makino;Tsutomu Yoshimura;Shuhei Iwade;Yoshio Matsuda
• 通讯作者: Yoshio Matsuda

Reexamination of SRAM Cell Write Margin Definitions in View of Predicting the Distribution

• DOI: 10.1109/tcsii.2011.2124531
• 发表时间: 2011-04
• 期刊: IEEE Transactions on Circuits and Systems II: Express Briefs
• 作者: H. Makino;S. Nakata;Hirotsugu Suzuki;S. Mutoh;M. Miyama;T. Yoshimura;S. Iwade;Y. Matsuda

Increase in Read Noise Margin of Single-bit-line SRAM using Adiabatic Change of Word Line Voltage

利用字线电压的绝热变化增加单位线 SRAM 的读取噪声容限

• DOI: 10.1109/tvlsi.2013.2247642
• 发表时间: 2014
• 期刊: IEEE Transactions on Very Large Scale Integration (VLSI) Systems
• 影响因子: 2.8
• 作者: Shunji Nakata;Hiroki Hanazono;Hiroshi Makino;Hiroki Morimura;Masayuki Miyama;and Yoshio Matsuda
• 通讯作者: and Yoshio Matsuda

2013年度電気関係学会関西連合大会

2013年关西电机协会联合会会议

• 发表时间: 2013
• 作者: 松本拓也;大東士朗;牧野博之;吉村勉;岩出秀平;松田吉雄
• 通讯作者: 松田吉雄