Enhancement of piezoelectric properties by introducing heterogeneous structure

通过引入异质结构增强压电性能

• 批准号: 23560804
• 负责人: OKAMURA Soichiro
• 金额: $ 3.24万
• 依托单位: Tokyo University of Science
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for Scientific Research (C)
• 财政年份: 2011
• 资助国家: 日本
• 起止时间: 2011 至 2013
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-23560804/
• 关键词: 圧電体; 薄膜; 空孔率; PZT; 歪み; ナノ粒子; 圧電; 密度

Pb(Zr,Ti)O3 (PZT) thin films with some amounts of pores or Pt nanoparticles were prepared by chemical solution deposition and their piezoelectric properties were evaluated by atomic force microscopy (AFM). Film thickness was approximately 300 nm. Their microstructures were also investigated by scanning electron microscopy (SEM) and transmission electron microscopy (TEM). The amount of pores was adjusted by changing the speed of spin-coating. Finally, the densities of the PZT films were estimated to be 0.92-0.98. On the other hand, the amount of Pt nanoparticles was adjusted by changing the mixing ratios of precursor solutions to 0-9%. As a result, an effective piezoelectric constant d33,AFM estimated by the AFM was enhanced with increasing the amounts of pores or Pt nanoparticles. These results suggest that unstable lattices which were easily distorted with applying an electric field increased by introducing the heterogeneous structures.

采用化学溶液沉积法制备了具有一定孔隙和Pt纳米颗粒的Pb（Zr，Ti）O3（PZT）薄膜，并利用原子力显微镜（AFM）对其压电性能进行了研究。膜厚度为约300 nm。用扫描电子显微镜（SEM）和透射电子显微镜（TEM）研究了它们的微观结构。通过改变旋涂的速度来调节孔的量。最后，PZT薄膜的密度估计为0.92-0.98。另一方面，通过将前体溶液的混合比改变为0- 9%来调节Pt纳米颗粒的量。其结果是，一个有效的压电常数d33，AFM估计的原子力显微镜增强与孔或Pt纳米粒子的量。这些结果表明，不稳定的晶格，很容易与施加电场扭曲通过引入异质结构增加。

项目成果

図8白金ナノ粒子の配合率2%のPZT薄膜相蘇亨、舟窪浩、岡村総一郎、山本孝、のヒステリシス特性および圧電特性飯島高志「Pb(Zr,Ti)O_3膜における圧電定数d_<31>, d_<33>の同時測定」

图8 铂纳米粒子掺混率为2%的PZT薄膜的磁滞特性和压电特性Toru Aiso, Hiroshi Funakubo, Soichiro Okamura, Takashi Yamamoto, Takashi Iijima“Pb(Zr,Ti)O_3薄膜中的压电常数d_<31>，同步d_<33> 的测量”

• 发表时间: 2013
• 作者: 松岡将史;西出正道;島宏美;西田謙
• 通讯作者: 西田謙

Pb(Zr,Ti)O3膜における圧電定数d31, d33の同時測定

同时测量 Pb(Zr,Ti)O3 薄膜中的压电常数 d31 和 d33

• 作者: 古館;上川;小島;掛川;K.Kakegawa;松岡将史，西出正道，島宏美，西田謙，相蘇亨，舟窪浩，岡村総一郎，山本孝，飯島高志
• 通讯作者: 松岡将史，西出正道，島宏美，西田謙，相蘇亨，舟窪浩，岡村総一郎，山本孝，飯島高志

Comparison of Piezoelectric Properties of Pb(Zr_<0.4>, Ti_<0.6>)O_3 Thin Films with Different Microstructures

不同微结构Pb(Zr_<0.4>,Ti_<0.6>)O_3薄膜压电性能比较

• 发表时间: 2012
• 作者: S. Okamura;R. Yanase;Y. Fujiuchi;T. Nakajima and T. Iijima
• 通讯作者: T. Nakajima and T. Iijima

「不均一構造導入による圧電体膜の特性改善」

“通过引入非均匀结构改善压电薄膜的性能”

• 作者: 柳瀬亮;中嶋宇史;飯島高志;岡村総一郎
• 通讯作者: 岡村総一郎

Crystal Structure Change with Applied Electric Field for (100)/(001)-oriented Polycrystalline Lead Zirconate Titanate Films

(100)/(001)取向多晶锆钛酸铅薄膜的晶体结构随施加电场的变化

• DOI: 10.1557/opl.2013.161
• 发表时间: 2013
• 期刊: Mater. Res. Soc. Symp. Proc.
• 作者: Ayumi Wada;Yoshitaka Ehara;Shintaro Yasui;Takahiro Oikawa;Mitsumasa Nakajima;Megu Wada;P. S. Sankara Rama Krishnan;Soichiro Okamura;Ken Nishida;Takashi Yamamoto;Takeshi Kobayashi;Hitoshi Morioka;and Hiroshi Funakubo
• 通讯作者: and Hiroshi Funakubo