Fabrication of Ferroelectric Nanocapacitors by Electron-beam Projection Patterning
Fabrication of Ferroelectric Nanocapacitors by Electron-beam Projection Patterning
批准号:
15560277
负责人:
OKAMURA Soichiro
金额:
$2.37万
依托单位国家:
日本
项目类别:
Grant-in-Aid for Scientific Research (C)
财政年份:
2003
资助国家:
日本
项目状态:
已结题
起止时间:
2003 至 2004
中文摘要
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英文摘要
A projection lithography technique of electron beam was applied to the fabrication of ferroelectric nanocapacitors to increase throughput. First of all, we tried to fabricate stencil masks. The stencil mask with square holes of 300x300 nm^2 was successfully prepared by using Ti foils with a thickness of 2 μm and etching them by FIB. Well-collimated electron beam was necessary to prevent the broadening pattern size. The distance of 10 μm between the mask and the sample was optimum for preventing undesirable exposure by secondary electrons from the mask. Finally, fine 400x400 nm^2-sized PZT nanocapacitors with self-aligned top Pt electrodes were successfully fabricated by the electron-beam-projection-lithography.Parasitic capacitances attended in the measurement of hysteresis properties of ferroelectric microcapacitors were estimated. A scanning probe microscope with a conductive cantilever was used for contacting to various sized PZT capacitors. A parasitic capacitance on condition the … More cantilever was lifted up by 40 μm from the contact point was estimated to be 0.88 pF. From the capacitor area dependence of the hysteresis slopes, the increase in parasitic capacitance by bringing the cantilever near to substrates for contact was estimated to be 0.061 pF.In the second year, we tried to fabricated ferroelectric photonic crystals. Ferroelectric photonic crystals consisted of a PLZT matrix and 800 nm-pitch air-holes with a diameter of 560 nm were successfully fabricated by the electron-beam-induced patterning process. Hexagonal holes inscribed to the circles with a diameter of 400 nm in a precursor matrix changed to circular holes with a diameter of 560 nm after heat-treatment due to shrinkage of the matrix. The optical properties of CSD-derived PLZT films were also evaluated. The PLZT films showed the refractive index of 2.3 and the Kerr constant of 0.4x10^<-16> m^2/V^2. Therefore, it is expected that an applied voltage of 9.7 V to 1 μm-thick PLZT photonic crystals induces 1%-decrease in refractive index and 40^o-swinging of light with a wavelength of 1.55 μm. Less
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Influence of Frozen a-Domains on Hysteresis Properties of Ferroelectric Thin-Film Capacitors
冻结a域对铁电薄膜电容器磁滞特性的影响
DOI:
--
发表时间:
2004
期刊:
Integrated Ferroelectrics 67
影响因子:
--
作者:
[N.Takagi, Y.Sato, T.Matsuyama, Hirokazu Tatsuoka, et al., S.Okamura]
通讯作者:
S.Okamura
Influence of Frozen a-Domain on Hysteresis Properties of Ferroelectric Thin Film Capacitors
冻结a域对铁电薄膜电容器磁滞特性的影响
DOI:
--
发表时间:
2004
期刊:
Integrated Ferroelectrics 67
影响因子:
--
作者:
[S.Okamura, Y.Mochiduki, H.Motohara, T.Shiosaki, S.Okamura]
通讯作者:
S.Okamura
S.Okamura: "Estimation of a Stray Capacitance in the Measurement of Hysteresis Properties of Ferroelectric Microcapacitors"Japanese Journal of Applied Physics. 43・9B(未定). (2004)
S.Okamura:“铁电微电容器磁滞特性测量中的杂散电容的估计”日本应用物理学杂志 43・9B(待定)。
DOI:
--
发表时间:
期刊:
影响因子:
--
作者:
[]
通讯作者:
DOI:
10.1080/10584580590899063
发表时间:
2005-01
期刊:
Integrated Ferroelectrics
影响因子:
0.7
作者:
[S. Okamura;Yuuki Mochiduki;Hiroyuki Motohara;T. Shiosaki]
通讯作者:
S. Okamura;Yuuki Mochiduki;Hiroyuki Motohara;T. Shiosaki
Influence of Frozen α-Domains on Hysteresis Properties of Ferroelectric Thin-Film Capacitors
冻结α域对铁电薄膜电容器磁滞特性的影响
DOI:
--
发表时间:
2004
期刊:
Integrated Ferroelectrics Vol.67
影响因子:
--
作者:
[S.Okamura, T.Shiosaki]
通讯作者:
T.Shiosaki
Enhancement of piezoelectric properties by introducing heterogeneous structure
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批准号:23560804
-
项目类别:Grant-in-Aid for Scientific Research (C)
-
资助金额:$3.24万
-
财政年份:2011
-
负责人:OKAMURA Soichiro
-
依托单位:
Study on the Change in the Switching Properties of Ferroelectrics Thin Films with the Passage of Time
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批准号:18560024
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项目类别:Grant-in-Aid for Scientific Research (C)
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资助金额:$2.28万
-
财政年份:2006
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负责人:OKAMURA Soichiro
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依托单位:
A Study of the Electron-beam-induced Micropatterning Process for Composite Oxides
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批准号:10650348
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项目类别:Grant-in-Aid for Scientific Research (C)
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资助金额:$1.92万
-
财政年份:1998
-
负责人:OKAMURA Soichiro
-
依托单位:
国内基金
海外基金
微阵列技术表面修饰Sapeptide膜结构支架诱导神经干细胞定向迁徙的研究
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批准号:30901511
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项目类别:青年科学基金项目
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资助金额:20.0万元
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批准年份:2009
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负责人:李万里
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依托单位: