Study of transport property for thermoelectric nanowire using nano-processing

点击翻译按钮获取中文摘要

We have fabricated single-crystal bismuth nano-wire possessing less than 1 micro-m and 1 mm-length. local electrodes were formed on side surface of the nano-wire by using nano-processing. As a result, Hall measurement for 4 micro- and 700 nm-diameter have been performed and obtained the mobility for each carrier from 4.2 to 300K. And it revealed that the the magnitude of the mobility in low temperature region was saturated by limitation of the mean free path of the carrier and the temperature coefficient of the resistivity was changed from positive to negative, especially narrow wire.