Research of High Performance Thermoelectric Materials with Nano-size Cages by focusing Random Host Structure of Quaternary Sn-based Clathrate Semiconductors
Research of High Performance Thermoelectric Materials with Nano-size Cages by focusing Random Host Structure of Quaternary Sn-based Clathrate Semiconductors
批准号:
23560838
负责人:
AKAI KOJI
金额:
$3.33万
依托单位:
依托单位国家:
日本
项目类别:
Grant-in-Aid for Scientific Research (C)
财政年份:
2011
资助国家:
日本
项目状态:
已结题
起止时间:
2011 至 2013
中文摘要
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英文摘要
We studied improve of a thermoelectric performance for Ba-Ga-Sn clathrate semiconductors with nano-size caged structure. The Sn-based clathrates have high abilities as high performance thermoelectric materials, in spits of a random structure of Ga and Sn in the host lattice. Therefore it is expected that transport properties are robust for additional element doping in Ba-Ga-Sn. In this study we tried to enhance the mobility of carrier by atomic doping to host sites or guest sites. In theoretical approaches we calculated the electronic structure by an ab-initio method and calculated the thermoelectric properties by using calculated band structure. In the calculation of the thermoelectric properties the semi-classical theory was used by the Boltzmann equation. In the experimental researches, new materials were synthesized, and a thermoelectric power, an electrical conductivity, and a thermal conductivity were measured.
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Study of Host-atoms Substitution Effects for Electronic Structure and Thermoelectric Properties on Sn-based Clathrates
Sn基笼形物主原子取代对电子结构和热电性能的影响研究
DOI:
--
发表时间:
2013
期刊:
影响因子:
--
作者:
[F. H. Latief, K. Kakehi, H. Murakami, 竹内健司他, K. Akai,K. Kishimoto,T. Koyanagi,Y. Kono,S. Yamamoto]
通讯作者:
K. Akai,K. Kishimoto,T. Koyanagi,Y. Kono,S. Yamamoto
III-IV族クラスレート半導体におけるIII族原子の分布ゆらぎに関する計算
III-IV族笼形半导体中III族原子分布波动的计算
DOI:
--
发表时间:
2012
期刊:
影响因子:
--
作者:
[松本浩一,赤井光治, 岸本堅剛, 栗巣普輝, 小柳剛, 山本節夫]
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山本節夫
「イオンモデルによるSnクラスレート半導体BaSGa16Sn30におけるGa分布ゆらぎの解析」
“利用离子模型分析 Sn 包合物半导体 BaSGa16Sn30 中的 Ga 分布波动”
DOI:
--
发表时间:
2014
期刊:
影响因子:
--
作者:
[K. Kakehi, F. H. Latief and T. Sato, Kenji Takeuchi, 松本浩一,赤井光治,岸本堅j,栗巣普輝,小柳j,山本節夫]
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松本浩一,赤井光治,岸本堅j,栗巣普輝,小柳j,山本節夫
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应用电子结构计算方法研究添加Rb元素的笼形半导体Ba-Ga-Sn的结构控制
DOI:
--
发表时间:
2012
期刊:
影响因子:
--
作者:
[S.Nakamura, Y.Mori, K.Takarabe, 福嶋英恵,古澤弘充,森田亮一,苅谷義治, 續木 雄基,藤原 弘,宮本 博之,飴山 惠, 赤井光治]
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赤井光治
「タイプS構造を持つ4元系Snクラスレートにおける電子状態と熱電特性」
“S型结构四元锡包合物的电子态和热电性能”
DOI:
--
发表时间:
2013
期刊:
影响因子:
--
作者:
[二宮悠, 戸高孝, 榎園正人, 赤井光治,河野欣,岸本堅j]
通讯作者:
赤井光治,河野欣,岸本堅j
共 26 条