High-pressure synthesis of silicide thermoelectric material

硅化物热电材料的高压合成

• 批准号: 23560848
• 负责人: MORI Yoshihisa
• 金额: $ 3.49万
• 依托单位: Okayama University of Science
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for Scientific Research (C)
• 财政年份: 2011
• 资助国家: 日本
• 起止时间: 2011 至 2013
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-23560848/
• 关键词: 熱電材料; 高圧合成; 放射光; シリサイド; 放射光実験; 高圧X線回折; 熱電素子; シリサイド半導体; シリサイド系半導体

Recently thermoelectric material has been studied actively because the material can recover waste heat energy as electric energy. Magnesium silicide (Mg2Si) is expected as an ecological friendly semiconductor. We have researched new functional material by using high-pressure (TP) technique. In this study, HP X-ray diffraction (XRD) at synchrotron radiation facility, HP synthesis by using piston cylinder equipment, and thermoelectric measurement were performed. Furthermore the equipment of thermoelectric measurement for small samples was developed.The result of HP-XRD study suggested it is difficult for the powder of Mg2Si to replace Ag with Mg under pressure. A mixture of Mg, Si, and Ag powders were reacted below melting point of Mg. Therefore, the mixture were used in the HP-synthesis at 1 GPa for 12 hrs. The result of thermoelectric measurements expects HP technique advance the conduction type of Mg2Si from n-type to intrinsic.

近年来，热电材料得到了积极的研究，因为该材料可以将废热能回收为电能。硅化镁（Mg2Si）有望成为一种生态友好的半导体。我们利用高压（TP）技术研究了新型功能材料。在这项研究中，进行了同步加速器辐射装置的HP X射线衍射（XRD）、使用活塞缸设备的HP合成以及热电测量。并研制了小样品热电测量装置。HP-XRD研究结果表明Mg2Si粉末在压力下很难用Mg取代Ag。 Mg、Si和Ag粉末的混合物在低于Mg熔点的温度下反应。因此，混合物在 1 GPa 下用于 HP 合成 12 小时。热电测量结果预计HP技术将Mg2Si的导电类型从n型推进到本征型。

项目成果

Energetic prediction on the stability of A2Mg2Si7, A2Mg4Si3, and AMgSi in the A2Si-Mg2Si system (A=Ca, Sr and Ba) and their calculated electronic structure

A2Si-Mg2Si体系（A=Ca、Sr和Ba）中A2Mg2Si7、A2Mg4Si3和AMgSi稳定性的能量预测及其计算​​的电子结构

• DOI: 10.1016/j.jallcom.2013.12.015
• 发表时间: 2014
• 期刊: Journal of Alloys and Compounds
• 影响因子: 6.2
• 作者: Y. Imai;Y. Mori;S. Nakamura;K. Takarabe
• 通讯作者: K. Takarabe

Thermoelectric measurement of Mg2Si synthesized under pressure

加压合成Mg2Si的热电测量

• 发表时间: 2013
• 作者: Y. Kaihara;Y. Mori;T. Yoshino;K. Takarabe
• 通讯作者: K. Takarabe

Sintering without grain growth for Mg2Si thermoelectric devices

• DOI: 10.1002/pssc.201200793
• 发表时间: 2013-08
• 期刊: Physica Status Solidi (c)
• 作者: Shigeyuki Nakamura;Y. Mori;K. Takarabe

X-ray diffraction studies of Mg2Si and Ag-doped Mg2Si under pressure

Mg2Si和Ag掺杂Mg2Si在压力下的X射线衍射研究

• 发表时间: 2013
• 作者: Y. Mori;Y. Kaihara;K. Takarabe
• 通讯作者: K. Takarabe

Mg2Siの高圧合成とX線構造解析

Mg2Si的高压合成及X射线结构分析

• 发表时间: 2013
• 作者: F.H.Latief;K.Kakehi;貝原裕司，森嘉久，財部健一，芳野極
• 通讯作者: 貝原裕司，森嘉久，財部健一，芳野極