Local fields and conduction electron behavior at impurity sites in ZnO

ZnO 中杂质位点的局域场和传导电子行为

• 批准号: 23600004
• 负责人: SATO Wataru
• 金额: $ 3.49万
• 依托单位: Kanazawa University
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for Scientific Research (C)
• 财政年份: 2011
• 资助国家: 日本
• 起止时间: 2011 至 2013
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-23600004/
• 关键词: 酸化亜鉛; 摂動角相関; 不純物; 局所構造; インジウム; 伝導電子; Cd-111; 電場勾配; RI; ZnO; アルミニウム

Local structures in zinc oxide (ZnO) doped with In ions at various concentrations were investigated by means of the time-differential perturbed angular correlation (TDPAC) method with the 111Cd(<-111In) probe. Indium-concentration dependence of the TDPAC spectra suggests that the local structures formed by In ions are sensitive to their population in the system. The results obtained by spectral analyses are the followings: In ions can substitute for Zn ions without generating any defects in their vicinity when doped with a trace amount; they locally form microscopic unique structures widely dispersed in ZnO at the In concentration of 0.05 at.% or higher, evidently indicating the solubility limit of In ions in ZnO; and In2O3-like compounds are formed in samples with further concentrated In as high as 10 at.%. We also successfully observed conduction electron scattering at the probe nuclei composing the unique structure, which is consistent with conductivity observed for bulk samples.

采用111Cd（<-111In）探针，采用微分摄动角相关（TDPAC）方法研究了不同浓度in离子掺杂氧化锌（ZnO）的局部结构。TDPAC光谱的铟浓度依赖性表明，由In离子形成的局部结构对其在体系中的分布很敏感。光谱分析结果表明：微量掺杂时，In离子可以代替Zn离子，在Zn离子附近不产生任何缺陷；当in浓度为0.05 at时，它们局部形成独特的微观结构，广泛分布在ZnO中。%或更高，表明In离子在ZnO中的溶解度极限；和类似in2o3的化合物在样品中进一步浓缩高达10at .%。我们还成功地观察到组成独特结构的探针核的传导电子散射，这与散装样品观察到的电导率一致。

项目成果

Strong Affinity between In and Al ImpuritiesDoped in ZnO

ZnO 中掺杂的 In 和 Al 杂质之间具有强亲和力

• DOI: 10.1143/jpsj.80.095001
• 发表时间: 2011
• 期刊: J. Phys. Soc. Jpn
• 作者: S. Komatsuda;W. Sato;S. Kawata;andY. Ohkubo
• 通讯作者: andY. Ohkubo

Thermal stability of locally-associated Al and In impurities in zinc oxide

氧化锌中局部伴生的 Al 和 In 杂质的热稳定性

• 发表时间: 2013
• 作者: S. Komatsuda;W. Sato;and Y. Ohkubo
• 通讯作者: and Y. Ohkubo

Characteristic interactions of 111Cd probes with nonradioactive In impurities doped in ZnO

111Cd 探针与 ZnO 中掺杂的非放射性 In 杂质的特征相互作用

• DOI: 10.1007/s10751-012-0709-1
• 发表时间: 2013
• 期刊: Hyperfine Interactions
• 作者: W. Sato;S. Komatsuda;and Y. Ohkubo
• 通讯作者: and Y. Ohkubo

Electric field gradient at the ^111Cd(←^111In) sites in Ga-doped ZnO

Ga掺杂ZnO中^111Cd(←^111In)位点的电场梯度

• 发表时间: 2011
• 期刊: A Supplement to Radiochimica Acta
• 作者: W. Sato;Y. Ohkubo;Y. Itsuki;S. Komatsuda;D. Minami;T. Kubota;S. Kawata;A. Yokoyama;and T. Nakanishi.
• 通讯作者: and T. Nakanishi.

酸化亜鉛中に導入した不純物位置での局所構造観察

观察氧化锌中引入杂质的位置的局部结构

• 发表时间: 2012
• 作者: W. Sato;S. Komatsuda;D. Minami;A. Osa;T. K. Sato;and Y. Ohkubo;佐藤 渉
• 通讯作者: 佐藤 渉