Nonvolatile optical memory with spin vertical-cavity surface emittinglasers

我们的非易失性光学存储器采用了垂直腔面发射激光器(VCSEL)，该激光器生长在具有较长电子自旋弛豫时间的GaAs(110)衬底上。读出是通过带有电子自旋注入的圆极化激光来完成的。作为第一步，我们尝试使用顺磁接触来演示自旋未极化电流注入下的激光。然而，人们发现VCSEL结构的改进是必要的。研究了一种用于降低阈值电流的氧化电流限制结构和一种用于在晶体质量较低的DBR上层下方注入电流的结构，并建立了它们的制备工艺。

Our nonvolatile optical memory utilizes a vertical-cavity surface-emitting laser (VCSEL) grown on GaAs(110) substrate which has a long electron spin relaxation time. The readout is done by circularly polarized lasing with electrical spin injection. As the first step, we tried to demonstrate lasing under spin unpolarized current injection using a paramagnetic contact. However, it was found that the improvement of the VCSEL structure is necessary. An oxidized current confinement structure for reduction of threshold current, and a structure for current injection at a layer under the upper DBR with a lower crystal quality were investigated, and their fabrication processes have been established.