Fabrication of Single-crystal Superconducting Tunnel Junctions, and Photodevice Applications

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We fabricated epitaxial-grown Al film as superconductor materials by molecular beam epitaxy. These films were characterized by reflection high-energy electron diffraction (RHEED), atomic force microscope (AFM) and residual resistance ratio (RRR) measurement. The growth of Al was investigated on Al2O3 (0001) and Si (111) substrates, and flat surface with relatively high RRR of 15 was realized at substrate temperatures around 100 degrees Celsius. We also tried the deposition of epitaxial-grown MgO film as an insulator material and STJ fabrication. A streak RHEED pattern was successfully observed at the top surface of Al/MgO/Al junctions. The epitaxial-grown junctions showed good SIS characteristics in 0.3 K measurements.