Fundamental study on surface recombination process and its effects on emission efficiency in nitride semiconductors

氮化物半导体表面复合过程及其对发射效率影响的基础研究

• 批准号: 23760021
• 负责人: ONUMA Takeyoshi
• 金额: $ 2.91万
• 依托单位: Tokyo National College of Technology
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for Young Scientists (B)
• 财政年份: 2011
• 资助国家: 日本
• 起止时间: 2011 至 2012
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-23760021/
• 关键词: 窒化物半導体; 表面再結合; 窒化ガリウム; 酸化亜鉛 酸化ガリウム; 再結合ダイナミクス; 半導体物性; 結晶工学; 酸化ガリウム; 酸化亜鉛; 表面プラズモン

Surface recombination in GaN and ZnO crystals was comparatively investigated usingsteady-state and time-resolved photoluminescence (PL) measurements. The measurementswere performed for various surface orientations (+c,-c, and m-plane surfaces), and themeasured PL intensity and lifetime showed distinct dependence on the surface orientation.The dependence clearly indicates that the surface recombination rate is modified by theeffects of surface band bending. The results were also verified by numerical analysisusing a rate equation model considering the diffusion of photoexcited carriers and theirrecombination processes on the surface and inside the crystal.

用稳态光致发光(PL)和时间分辨光致发光(PL)方法比较研究了GaN和ZnO晶体中的表面复合。对不同的表面取向(+c、-c和m面)进行了测量，测得的荧光强度和寿命与表面取向有明显的依赖关系，表明表面复合速率受表面能带弯曲的影响。用速率方程模型对计算结果进行了验证，该模型考虑了光激发载流子的扩散以及晶体表面和内部的非复合过程。

项目成果

六方晶GaNとZnOにおける表面再結合の比較

六方氮化镓和氧化锌表面复合的比较

• 发表时间: 2011
• 作者: Y. Nomura;J. Yamasaki;S. Inamoto;K. Okazaki-Maeda;and N. Tanaka;尾沼猛儀,坂井直之,井垣辰浩,山口智広,山口敦史,本田徹
• 通讯作者: 尾沼猛儀,坂井直之,井垣辰浩,山口智広,山口敦史,本田徹

Optical properties of GaN films and an AlGaN/GaN heterostructure fabricated on GaN substrates grown by the ammonothermal method using gas-phase synthesized NH4Cl mineralizer

使用气相合成 NH4Cl 矿化剂通过氨热法在 GaN 衬底上制造的 GaN 薄膜和 AlGaN/GaN 异质结构的光学特性

• 作者: S.F.Chichibu;K.Hazu;Y.Kagamitani;T.Onuma;D.Ehrentraut;T.Fukuda;and T.Ishiguro
• 通讯作者: and T.Ishiguro

Incident angle resolvedcathodoluminescence study of ZnO singlecrystals

ZnO 单晶的入射角分辨阴极发光研究

• 发表时间: 2012
• 作者: 野村優貴;稲元伸;山崎順;田中信夫;T. Onuma
• 通讯作者: T. Onuma

Surface recombination in polar andnonpolar GaN surfaces

极性和非极性 GaN 表面的表面复合

• 发表时间: 2011
• 作者: N. Sakai;T. Onuma;A. A. Yamaguchi;and T.Honda
• 通讯作者: and T.Honda

Surface Modificationof GaN Crystals and Its Effects on OpticalProperties

GaN晶体的表面修饰及其对光学性能的影响

• 发表时间: 2013
• 作者: S. Fujioka;R. Amiya;T. Onuma;T.Yamaguchi;and T. Honda
• 通讯作者: and T. Honda