Fundamental study on nonpolar AlInN alloys for polarized UV light emitting devices

为了开发非极性Alinn合金作为偏振紫外光发射体的潜在能力，采用金属有机气相外延方法生长了m平面Alinn薄膜。通过激子跃迁能量和振子强度的理论计算，分析了各向异性应力作用下薄膜近带边发射的偏振特性。此外，对GaN表面载流子复合过程的研究表明，极化感应电场影响GaN的表面复合。

In order to develop the potential ability of nonpolar AlInN alloys for polarized UV light emitters, m-plane AlInN films were grown by metal organic vapor phase epitaxy. Polarization characteristics of the near-band-edge emission in the films suffering from anisotropic stresses were analyzed by theoretical calculation for energies and oscillator strengths of the exciton transitions. Also, studies on the carrier recombination processes at the GaN surfaces indicated the polarization-induced electric field affects the surface recombination in GaN.