Analysis of promoted oxidation reaction just below ultrathin films of transition metals grown on Si surfaces

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We found that promoted oxidation reaction occurs on titanium-covered silicon surfaces by oxygen exposure at room temperature. We investigated thickness and composition of the oxide layer in order to clarify this process. In the case of evaluation of the oxide thickness by photoelectron spectroscopy, it is desirable to use photon energies with large mean free path. We found that cautious analysis should be performed in order to evaluate the oxide composition. This viewpoint was obtained based on the analysis of titanium adsorption on oxidized silicon surfaces.