Three-dimensional analysis of atomic arrangements in cubic SiC/Si interfaces by aberration-corrected TEM and ab initio calculations

通过像差校正 TEM 和从头算计算对立方 SiC/Si 界面中的原子排列进行三维分析

• 批准号: 23760030
• 负责人: YAMASAKI Jun
• 金额: $ 2.83万
• 依托单位: Nagoya University
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for Young Scientists (B)
• 财政年份: 2011
• 资助国家: 日本
• 起止时间: 2011 至 2012
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-23760030/
• 关键词: 3C-SiC/Si(001)界面; 界面構造解析; 収差補正透過型電子顕微鏡; 偽像処理; 第一原理計算; 積層欠陥; ミスフィット転位; 界面ステップ; 3C-SiC/Si界面; 収差補正透過電子顕微鏡

Three-dimensional atomistic structure of the 3C-SiC/Si(001) interface was clarified by utilizing aberration-corrected TEM and a newly-developed image processing method to eliminate artificial image contrast. We clarified also that the edge of a {111} stacking fault starting at the interface was a 30°Shockley partial dislocation. The lattice strain around the dislocation has been minimized by a neighboring interfacial step. It was also clarified that a lot of stacking faults had been generated in the initial stage of the growth, that is, during the carbonization process of the silicon surface. Based on the results, we succeeded in proposing a model for the generation mechanism of the stacking faults.

利用像差校正透射电镜和新发展的消除人工图像反差的图像处理方法，研究了3C-SiC/Si（001）界面的三维原子结构。我们还澄清了从界面开始的{111}层错的边缘是30°Shockley部分位错。位错周围的晶格应变已被相邻的界面台阶最小化。在生长初期，即硅表面碳化过程中，产生了大量的层错。基于此，我们成功地提出了一个模型的堆垛层错的产生机制。

项目成果

Polytype Transformation by Replication of Stacking Faults Formed by Two-Dimensional Nucleation on Spiral Steps during SiC Solution Growth

• DOI: 10.1021/cg300360h
• 发表时间: 2012-05
• 期刊: Crystal Growth & Design
• 影响因子: 3.8
• 作者: S. Harada;Alexander;Kazuaki Seki;Y. Yamamoto;Can Zhu;Yuta Yamamoto;S. Arai;J. Yamasaki;N. Tanaka;T. Ujihara

3C-SiC/Si(001) 界面における積層欠陥の収差補正 TEM 解析

3C-SiC/Si(001) 界面堆垛层错的像差校正 TEM 分析

• 发表时间: 2013
• 作者: 山崎順;稲元伸;野村優貴;石田篤志;秋山賢輔;平林康男;田中信夫
• 通讯作者: 田中信夫

Atomic Arrangement at 3C-SiC/Si(001) Interface Revealed by Aberration-Corrected Transmission Electron Microscopy and a New Image Processing Method

像差校正透射电子显微镜和新的图像处理方法揭示了 3C-SiC/Si(001) 界面的原子排列

• 发表时间: 2011
• 作者: J. Yamasaki;S. Inamoto;H. Tamaki;and N. Tanaka
• 通讯作者: and N. Tanaka

Atomistic Structure Analysis of 3C-SiC/Si(001) Interface and Stacking Faults by Aberration-Corrected Transmission Electron Microscopy

通过像差校正透射电子显微镜分析 3C-SiC/Si(001) 界面和堆垛层错的原子结构

• 发表时间: 2012
• 作者: J. Yamasaki;S. Inamoto;Y. Nomura and N. Tanaka
• 通讯作者: Y. Nomura and N. Tanaka

Analysis of Atomic Arrangement at 3C-SiC/Si(001) Interface by Aberration-Corrected Transmission Electron Microscopy and a New Image Processing Method

通过像差校正透射电子显微镜和新的图像处理方法分析 3C-SiC/Si(001) 界面的原子排列

• 发表时间: 2011
• 作者: J. Yamasaki;S. Inamoto;H. Tamaki;K.Okazaki-Maeda;and N. Tanaka
• 通讯作者: and N. Tanaka