Three-dimensional analysis of atomic arrangements in cubic SiC/Si interfaces by aberration-corrected TEM and ab initio calculations

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Three-dimensional atomistic structure of the 3C-SiC/Si(001) interface was clarified by utilizing aberration-corrected TEM and a newly-developed image processing method to eliminate artificial image contrast. We clarified also that the edge of a {111} stacking fault starting at the interface was a 30°Shockley partial dislocation. The lattice strain around the dislocation has been minimized by a neighboring interfacial step. It was also clarified that a lot of stacking faults had been generated in the initial stage of the growth, that is, during the carbonization process of the silicon surface. Based on the results, we succeeded in proposing a model for the generation mechanism of the stacking faults.