Structure and carrier transport property of electrode interfaces in wide-gap semiconducting carbides by using atom-resolved characterization

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The atomic structure of the lattice defects and hetero-interfaces in electronic devices is required to understand for control of the electron transport property and technological manipulation. Using advanced electron microscopy, we characterize qualitatively the atomic structure of the ion-implanted defects and contact electrode interfaces in silicon carbide semiconductor. Theoretical calculations predict quantitatively that this interface enable lowered Schottky barrier and enhance carrier transport. The combined experimental and theoretical studies performed provide insight into the complexelectronic and electric effects in the devices, which are fundamental for improving the properties in the electronics.