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Novel etching process for graphene fabrication utilizing oxidation decomposition reaction

Novel etching process for graphene fabrication utilizing oxidation decomposition reaction
利用氧化分解反应制造石墨烯的新型蚀刻工艺
批准号:
23710137
负责人:
ISHIDA Nobuyuki
金额:
$3.0万
依托单位国家:
日本
项目类别:
Grant-in-Aid for Young Scientists (B)
财政年份:
2011
资助国家:
日本
项目状态:
已结题
起止时间:
2011 至 2012

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中文摘要
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英文摘要
We show that graphene layers can be removed from graphite in a layer by layer manner using reactive oxygen species generated by plasma. However, Raman spectrum suggests that the surface of a fabricated graphene sheet by the etching is oxidized. Careful inspection of the oxidation decomposition process clarifies that oxidation occur only at the top most surface. These results indicate a possibility to establish a procedure that makes it possible to etch graphene layers from graphite with controlling the number of the layers. Our next step is to find a way to remove the top most oxidized graphene layer.
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DOI: --
发表时间: 2011
期刊:
影响因子: --
作者: [Y.Matsumoto, S.Sakai, S.Entani, Y.Takagi, T.Nakagawa, H.Naramoto, P.Avramov, T.Yokoyama, Nobuyuki Ishida and Daisuke Fujita, Yoshihiro Matsumotoら, Nobuyuki Ishida and Daisuke Fujita, K. Hildら, Nobuyuki Ishida and Daisuke Fujita]
通讯作者: Nobuyuki Ishida and Daisuke Fujita
DOI: 10.1021/jp303152c
发表时间: 2012-09-27
期刊: JOURNAL OF PHYSICAL CHEMISTRY C
影响因子: 3.7
作者: [Ishida, Nobuyuki, Fujita, Daisuke]
通讯作者: Fujita, Daisuke
Adsorption of Co-phthalocyanine on the rutile TiO2(110) surface: An STM/STS study
金红石 TiO2(110) 表面上钴酞菁的吸附:STM/STS 研究
DOI: --
发表时间: 2012
期刊:
影响因子: --
作者: [Y.Matsumoto, S.Sakai, S.Entani, Y.Takagi, T.Nakagawa, H.Naramoto, P.Avramov, T.Yokoyama, Nobuyuki Ishida and Daisuke Fujita, Yoshihiro Matsumotoら, Nobuyuki Ishida and Daisuke Fujita]
通讯作者: Nobuyuki Ishida and Daisuke Fujita
DOI: 10.1116/1.4736946
发表时间: 2012-07
期刊: Journal of Vacuum Science and Technology
影响因子: --
作者: [N. Ishida;D. Fujita]
通讯作者: N. Ishida;D. Fujita
6
    Atomic-scale characterization of defects and dislocations using cross-sectional SPM: Application to GaN
    • 批准号:
      17K06366
    • 项目类别:
      Grant-in-Aid for Scientific Research (C)
    • 资助金额:
      $3.0万
    • 财政年份:
      2017
    • 负责人:
      ISHIDA Nobuyuki
    • 依托单位:
    海外基金