Amorphous/Crystalline Hybrid Silicon Photonic Integrated Circuits

我们提出了用于下一代网络和紧凑型光子接收器的0.8 μ m范围的硅光子集成电路。在光互连中，0.8 μ m波长区域的垂直腔面发射激光器（VCSEL）和硅光电二极管（PD）用于实现低成本系统。硅雪崩光电二极管（APD）采用互补金属氧化物半导体（CMOS）工艺制备，由于易于与跨阻放大器（TIA）及后续电路集成，其带宽随着探测面积的减小和电极焊盘尺寸的减小而增加，这是由于减小了pn结的耗尽电容和焊盘电容。最大带宽为9 GHz。采用CF 4反应离子刻蚀工艺制备了多模Ta 2 O 5光波导。在830 nm处获得了1dB/cm的传输损耗，

We propose the 0.8 um range silicon photonic integrated circuits for a next generation network and a compact photonic receiver. In optical interconnection, 0.8 um wavelength region vertical-cavity surface-emitting lasers (VCSELs) and Si photodiodes (PDs) are used for realizing low cost systems. Si avalanche PDs (APDs) was fabricated by the complementary metal-oxide-semiconductor process are expected for optical interconnection applications due to easy integration with trans-impedance amplifiers (TIA) and the following electronic circuits.The bandwidth of APDs was increased with decreasing the detection area and decreasing the electrode PAD size because of decreased depletion capacitance at pn junctions and the PAD capacitance. The maximum bandwidth of 9 GHz was obtained. We fabricated multi-mode Ta2O5 waveguides by a CF4 reactive ion etching process. The propagation loss of 1 dB/cm was obtained at 830nm,