グラフェン技術を用いた次世代巨大磁気抵抗スピントロニクスデバイスの開発

自旋电子学是纳米技术中最令人兴奋和最具挑战性的领域之一，对基础科学研究和工业应用都很重要。如今，微电子器件继续缩小尺寸以实现更高的速度。当这种收缩发生时，设计参数受到影响，当前使用的材料被推到了极限。为了保持设备的收缩率，同时保持整体性能目标，即使进行一些技术创新，数据存储容量最终也会达到一个自然的性能极限。随着微电子微型化的极限在眼前出现，为了配合世界经济的持续扩张和满足世界微处理器市场的永不满足的需求，人们已经有了巨大的动力去从根本上创新新的材料和技术。因此，本项目旨在开发新型巨磁阻（GMR）器件，其GMR比自旋电子材料高出几个数量级；二维材料，如MoS2和WSe2，有望成为转移自旋的良好候选者。因此，我研究了这些材料。我已经成功地制造了几层MoS2晶体管。此外，为了获得这些晶体管的器件物理特性的详细信息，我进行了软x射线光谱显微镜的操作。结果发现，电子态通过多体效应被调制。

Spintronics is one of the most exciting and challenging areas in nanotechnology, important to both fundamental scientific research and industrial applications. Nowadays, microelectronic devices continue to diminish in size to achieve higher speeds. As this shrinkage occurs, design parameters are impacted in such a way that the materials in current use are pushed to their limits. To keep the rate of device shrinkage and still maintain overall performance goals, the data storage capacity will eventually reach a natural performance limit even with some technical innovations. With the limits of microelectronic miniaturization in sight there has been an enormous drive to innovate radically new materials and technologies in order to match the continued expansion of the world economy and to meet the insatiable demands of the world microprocessor market. This project therefore aims at development of novel Giant Magneto-Resistive (GMR) devices with GMR ratio exceeding by few orders of magnitudes of spintronic materials;2D materials, such as MoS2 and WSe2 are expected to be promising as good candidates to transfer spin. Therefore,I have stuided these materials. I have successfully fabricated few-layer MoS2 transistors. Furthermore, to acquire detailed information on the device physics of these transistor, I have performed operando soft x-ray spectromicroscopy. As a result, the electronic states were found to be modulated through many-body effects.