グラフェン技術を用いた次世代巨大磁気抵抗スピントロニクスデバイスの開発

自旋电子学是纳米技术中最令人兴奋和最具挑战性的领域之一，对基础科学研究和工业应用都很重要。如今，微电子器件的尺寸继续减小以实现更高的速度。当这种收缩发生时，设计参数受到影响，使得当前使用的材料被推到其极限。为了保持设备收缩率并保持整体性能目标，即使进行了一些技术创新，数据存储容量最终也会达到自然的性能极限。随着微电子小型化的极限的出现，人们有一种巨大的动力，要从根本上革新新的材料和技术，以便与世界经济的持续发展相匹配，并满足世界微处理器市场永不满足的需求。因此，该项目旨在开发新型巨磁阻（GMR）器件，其GMR比超过自旋电子材料的几个数量级;2D材料，如MoS 2和WSe 2，有望成为转移自旋的良好候选者。因此，我研究了这些材料。我已经成功地制作了几层MoS 2晶体管。此外，为了获得有关这些晶体管的器件物理的详细信息，我进行了软X射线光谱显微术。其结果是，电子状态被发现是通过多体效应调制。

Spintronics is one of the most exciting and challenging areas in nanotechnology, important to both fundamental scientific research and industrial applications. Nowadays, microelectronic devices continue to diminish in size to achieve higher speeds. As this shrinkage occurs, design parameters are impacted in such a way that the materials in current use are pushed to their limits. To keep the rate of device shrinkage and still maintain overall performance goals, the data storage capacity will eventually reach a natural performance limit even with some technical innovations. With the limits of microelectronic miniaturization in sight there has been an enormous drive to innovate radically new materials and technologies in order to match the continued expansion of the world economy and to meet the insatiable demands of the world microprocessor market. This project therefore aims at development of novel Giant Magneto-Resistive (GMR) devices with GMR ratio exceeding by few orders of magnitudes of spintronic materials;2D materials, such as MoS2 and WSe2 are expected to be promising as good candidates to transfer spin. Therefore,I have stuided these materials. I have successfully fabricated few-layer MoS2 transistors. Furthermore, to acquire detailed information on the device physics of these transistor, I have performed operando soft x-ray spectromicroscopy. As a result, the electronic states were found to be modulated through many-body effects.