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ＩＩＩ－Ｖ　ＣＭＯＳフォトニクスを用いた光電子集積回路に関する研究

基于CMOS光子学的光电集成电路III-V族研究

基本信息

批准号：
15J08956
负责人：
朴珍權
金额：
$ 1.22万
依托单位：
The University of Tokyo
依托单位国家：
日本
项目类别：
Grant-in-Aid for JSPS Fellows
财政年份：
2015
资助国家：
日本
起止时间：
2015-04-24 至 2017-03-31
项目状态：
已结题

来源：
https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-15J08956/
关键词：
III-V on insulator III-V CMOS photonics Monolithic integration InGaAs MOSFET InGaAsP modulator Direct wafer bonding InGaAsP Photonic device

项目摘要

we demonstrated the monolithically integrated InGaAsP optical modulator with InGaAs driver MOSFET on III-V CMOS photonics platform with solving above problems.Firstly, the effect of pre-bonding annealing on III-VOI wafer was investigated. By applying pre-bonding annealing process, we successfully suppressed void generation. The void density was highly reduced from 106 to 103 after post annealing process at 600°C. Secondly, low resistive lateral P-I-N junction was formed by Zn diffusion and Ni-InGaAsP alloy junction. By Zn diffusion method, the sheet and contact resistance of p+ region was highly reduced compare to Be ion implantation method. Moreover, the Ni-InGaAsP alloy was firstly demonstrated to replace Si ion implantation. The Ni-InGaAsP alloy enable to make a low resistive n+ junction with low temperature under 350°C. Although the total process temperature was suppressed to 500°C. Using these result, we demonstrated the InGaAsP optical modulator using optical absorption. The InGaAsP modulator shows almost -40dB/mm attenuation at 40mA/mm current injection which is almost 2 times larger than Si modulator.Finally, we firstly demonstrated monolithically integrated InGaAsP asymmetric Mach-Zehnder interferometer (MZI) modulator and InGaAs driver MOSFET. The InGaAsP modulator shows shift of free-spectrum range (FSR) by current injection and it needs almost 2.2 mA for phi shift. While modulator operation via InGaAs driver MOSFET, we obtained the phase shift of InGaAsP modulator by gate bias change.

针对上述问题，我们在III-V族CMOS光子学平台上实现了InGaAsP光调制器与InGaAs驱动MOSFET的单片集成。通过采用键合前退火工艺，我们成功地抑制了空洞的产生。在600°C下进行后退火处理后，空隙密度从106大幅降低至103。其次，通过Zn扩散和Ni-InGaAsP合金结形成低阻横向P-I-N结。通过Zn扩散方法，与Be离子注入方法相比，p+区的薄层电阻和接触电阻大大降低。此外，首次证实了Ni-InGaAsP合金可替代Si离子注入。Ni-InGaAsP合金能够在350°C以下的低温下制作低阻n+结。尽管总工艺温度被抑制到500°C。利用这些结果，我们证明了InGaAsP光调制器的光吸收。在40 mA/mm的电流注入下，InGaAsP调制器的衰减约为-40dB/mm，是Si调制器的2倍。最后，我们首次实现了InGaAsP非对称马赫-曾德尔干涉仪（MZI）调制器和InGaAs驱动MOSFET的单片集成。InGaAsP调制器通过电流注入显示出自由光谱范围（FSR）的移位，并且其需要几乎2.2mA用于Φ移位。当调制器通过InGaAs驱动MOSFET工作时，我们通过栅极偏置的变化得到了InGaAsP调制器的相移。

项目成果

期刊论文数量（0）

专著数量（0）

科研奖励数量（0）

会议论文数量（0）

专利数量（0）

Heterogeneous CMOS Photonics Based on SiGe/Ge and III-V Semiconductors Integrated on Si Platform

基于 SiGe/Ge 和 III-V 族半导体集成在 Si 平台上的异构 CMOS 光子学

DOI：
10.1109/jstqe.2017.2660884
发表时间：
2017
期刊：
IEEE Journal of Selected Topics in Quantum Electronics
影响因子：
4.9
作者：
Mitsuru Takenaka,Younghyun Kim;Jaehoon Han;Jian Kang;Yuki Ikku;Yongpeng Cheng;Jinkwon Park;Misa Yoshida;Seiya Takashima;Shinich Takagi
通讯作者：
Shinich Takagi

Ni-InGaAsP alloy for low-resistivity lateral PIN junction of carrier-injected InGaAsP photonic devices

用于载流子注入 InGaAsP 光子器件低电阻率横向 PIN 结的 Ni-InGaAsP 合金